2021 International Conference on Solid State Devices and Materials

Sep 6, 2021 - Sep 9, 2021

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382 results (111 - 120)

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[D-1-05] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration

〇Takeru Kumabe¹, Yuto Ando², Hirotaka Watanabe², Atsushi Tanaka^2,3, Manato Deki^1,4, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Natl. Inst. Mater. Sci., 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:51 PM - 2:58 PM |PDF Download

[D-1-06] Cellular-Automaton Study of Degeneracy Effects on the Mobility of HEMT’s

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Junya Yaita², Junji Kotani² (1.AIST, 2.Fujitsu Limited)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:58 PM - 3:05 PM |PDF Download

[D-1-07] Proposal of stable operation of resonant tunneling diodes satisfying non-oscillation condition in terahertz frequency range

〇Safumi Suzuki¹ (1.Tokyo Tech)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 3:05 PM - 3:12 PM |PDF Download

[D-1-08] Alpha-particle detectors with GaN PiN homoepitaxial layer

〇hironori okumura¹, Yohei Ogawara¹, Manabu Togawa², Masaya Miyahara², Jiro Nishinaga³, Masataka Imura⁴, Tadaaki Isobe⁵ (1.Univ. of Tsukuba, 2.KEK, 3.AIST, 4.NIMS, 5.RIKEN)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 3:12 PM - 3:19 PM |PDF Download

[D-2-01 (Invited)] Performance Comparison of Scaled IGBTs and CIGBTs

〇Sankara Narayanan Ekkanath Madathil¹, Peng Luo¹, Wataru Saito², Shinichi Nishizawa² (1.The University of Sheffield, 2.Kyushu University)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 3:45 PM - 4:15 PM |PDF Download

[D-2-02] Improvement of Qrr-IDSS and dynamic avalanche of field-plate MOSFETs by local lifetime control on the cathode side

〇Yusuke KOBAYASHI¹, Tatsuya Nishiwaki², Akihiro Goryu^1,2, Tsuyoshi Kachi², Ryohei Gejo², Hiro Gangi¹, Tomoaki Inokuchi¹, Kazuto Takao¹ (1.Toshiba Corp., 2.Toshiba Electronic Devices & Storage Corp.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 4:15 PM - 4:22 PM |PDF Download

[D-2-03] Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect

〇Takaaki Tominaga^1,2, Toshiaki Iwamatsu¹, Yukiyasu Nakao¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Shingo Tomohisa¹, Naruhisa Miura¹, Shuhei Nakata² (1.Mitsubishi Electric Corp., 2.Kanazawa Inst. of Tech.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 4:22 PM - 4:29 PM |PDF Download

[D-2-04] Effect of k-means Clustering for Analysis of Power Cycle Test Waveforms on Failure Prediction

〇Ryosuke Okachi¹, Katsuhiro Kutsuki¹, Junya Muramatsu¹, Masataka Deguchi² (1.Toyota Central R&D Labs., Inc., 2.DENSO Corp.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 4:29 PM - 4:36 PM |PDF Download

[D-2-05] Experimental Validation of Thermal Couple Impedance Model for Accurate Die Temperature Estimation in Power Modules

〇Yohei Nakamura^1,3, Naotaka Kuroda¹, Ken Nakahara¹, Michihiro Shintani², Takashi Sato³ (1.ROHM Co., Ltd., 2.Graduate School of Sci. and Tech., Nara Inst. of Sci. and Tech., 3.Graduate School of Informatics, Kyoto Univ.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 4:36 PM - 4:43 PM |PDF Download

[D-2-06] High Breakdown Voltage InGaAs/AlGaAs/InGaAs Superjunction Devices with Modulation-Doping for On-Resistance Reduction

Hiroaki Ogawa¹, 〇Naotaka Iwata¹ (1.Toyota Technological Institute)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 4:43 PM - 4:50 PM |PDF Download

382 results (111 - 120)

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