[AW-05] Comment from Young Researcher Award recipient

Quentin Wilmart (Univ. Grenoble Alpes, CEA, LETI)

2021 International Conference on Solid State Devices and Materials

[AW-06] Comment from Young Researcher Award recipient

Mikie Tsuji (University of Tsukuba)

2021 International Conference on Solid State Devices and Materials

[AW-07] Comment from Young Researcher Award recipient

Taro Sasaki (The University of Tokyo)

2021 International Conference on Solid State Devices and Materials

[AW-08] Comment from Young Researcher Award recipient

Shutaro Karube (Tohoku University)

2021 International Conference on Solid State Devices and Materials

[AW-09] Comment from Young Researcher Award recipient

Takuya Wadatsumi (Kobe University)

2021 International Conference on Solid State Devices and Materials

[PD-01] -

2021 International Conference on Solid State Devices and Materials |Mon. Sep 6, 2021 4:45 PM - 5:30 PM

[A-1-01 (Invited)] Recent Progress of FDSOI MOS Technology for Quantum Computing and Perspectives for Scaling up

〇Benoit Bertrand¹, Louis Hutin¹, Heimanu Niebojewski¹, Pierre-André Mortemousque¹, Mikaël Cassé¹, Gérard Billiot¹, Xavier Jehl², Romain Maurand², Matias Urdampilleta³, Yann-Michel Niquet², Silvano De Franceschi², Tristan Meunier³, Maud Vinet¹ (1.Univ. Grenoble Alpes, CEA-Leti, 2.Univ. Grenoble Alpes, CEA-IRIG, 3.Univ. Grenoble Alpes, CNRS, Néel Inst.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:00 PM - 2:30 PM |PDF Download

[A-1-02] 16x8 Quantum Dot Array Operation at Cryogenic Temperatures

〇Noriyuki Lee¹, Ryuta Tsuchiya¹, Yusuke Kanno¹, Toshiyuki Mine¹, Yoshitaka Sasago¹, Go Shinkai¹, Raisei Mizokuchi², Jun Yoneda³, Tetsuo Kodera², Chihiro Yoshimura¹, Shinichi Saito¹, Digh Hisamoto¹, Hiroyuki Mizuno¹ (1.Research & Development Group, Hitachi, Ltd., 2.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 3.Tokyo Tech Academy for Super Smart Society, Tokyo Institute of Technology)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:30 PM - 2:37 PM |PDF Download

[A-1-03] Characterization of Sub-threshold Swing of Si n-MOSFETs over a Temperature Range of 4 K to 300 K

〇Min-Soo Kang¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:37 PM - 2:44 PM |PDF Download

[A-1-04] Effect of Gate Stack Material on Performance and Low-frequency Noise in Si p-MOSFETs at Cryogenic Temperature: Comparison of SiO₂/Poly-Si Gate and High-k/Metal Gate

〇Hiroshi Oka¹, Takumi Inaba¹, Ryo Hashimoto¹, Takahiro Mori¹ (1.AIST)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:44 PM - 2:51 PM |PDF Download