[B-3-06] Artificial Synapses Based on Milk Casein Polymer Electric-Double-Layer

〇Sung-Hun Kim¹, Won-Ju Cho¹ (1.Kwangwoon Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:58 AM - 10:05 AM |PDF Download

[B-3-07] Highly Stable-Polymer-Electrolyte Chitosan Memristor with Embedded TiO_x Layer by Microwave-Assisted Oxidation

〇Jin-Gi Min¹, Won-Ju Cho¹ (1.Univ. of Kwangwoon)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 10:05 AM - 10:12 AM |PDF Download

[B-5-01 (Invited)] Hafnia-based Ferroelectric Tunnel Junction for Emerging Applications

〇Shosuke Fujii¹, Marina Yamaguchi¹, Shoichi Kabuyanagi¹, Kensuke Ota¹, Masumi Saitoh¹ (1.Kioxia Corp.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:00 PM - 2:30 PM |PDF Download

[B-5-02] Small Array Area, Memory Error Tolerant ReRAM Computation-in-Memory with Log-encoding Simulated Annealing for Combinational Optimization Problems

〇Naoko Misawa¹, Kenta Taoka¹, Chihiro Matsui¹, Ken Takeuchi¹ (1.The University of Tokyo)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:30 PM - 2:37 PM |PDF Download

[B-5-03] Comprehensive Computation-in-Memory Simulation Platform with Non-volatile Memory Non-Ideality Consideration for Deep Learning Applications

〇Kazuhide - Higuchi¹, Chihiro Matsui¹, Naoko Misawa¹, Ken Takeuchi¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:37 PM - 2:44 PM |PDF Download

[B-5-04] Design Methods of Computing-in-Memory (CIM) and Ternary Content Addressable Memory (TCAM) using 3D AND-Type Flash Memory to Support Memory-Centric Computing

Po-Kai Hsu¹, 〇Hang-Ting Lue¹, Teng-Hao Yeh¹, Keh-Chung Wang¹, Chih-Yuan Lu¹ (1.Macronix Int'l. Co., Ltd.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:44 PM - 2:51 PM |PDF Download

[B-5-05] Optimal Energetic Trap Distribution of Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using Machine Learning Methodology

〇Kihoon Nam¹, Chanyang Park¹, Jun-Sik Yoon¹, Hyeok Yun¹, Hyundong Jang¹, Kyeongrae Cho¹, Hojung Kang², Min Sang Park³, Haesoon Oh², Jaesung Sim², Rock-Hyun Baek¹ (1.Department of Electrical Engineering, Pohang Univ. of Sci. and Tech. (POSTECH), Pohang, 37673, 2.SK hynix Inc., Cheongju-si, Chungcheongbuk-do, 28429, 3.SK hynix Inc., Icheon-si, Gyeonggi-do, 17336)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:51 PM - 2:58 PM |PDF Download

[B-5-06] Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT) for Computation In Memory

〇Koji Sakui¹, Nozomu Harada¹ (1.Unisantis Electronics Singapore Pte Ltd.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:58 PM - 3:05 PM |PDF Download

[B-5-07] Impact of endurance characteristics of FeFETs on reservoir computing capabilities

〇Eishin Nako¹, Kasidit Toprasertpong¹, Ryosho Nakane¹, Zeyu Wang¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:05 PM - 3:12 PM |PDF Download

[B-5-08] Cryogenic Operation of NanoBridge at 4K for Controlling Qubit

〇Koichiro Okamoto¹, Takahisa Tanaka², Makoto Miyamura¹, Hiroki Ishikuro³, Ken Uchida², Toshitsugu Sakamoto¹, Munehiro Tada¹ (1.NanoBridge Semiconductor, Inc., 2.Univ. of Tokyo, 3.Keio Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:12 PM - 3:19 PM |PDF Download