[D-3-01 (Invited)] Progress in CMOS Integration in Wide-bandgap Electronics

〇Samuel James Bader^1,2, Reet Chaudhuri¹, Kazuki Nomoto¹, Han Wui Then², Huili Grace Xing¹, Debdeep Jena¹ (1.Cornell Univ., 2.Intel Corp.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:00 AM - 9:30 AM |PDF Download

[D-3-02] Steep Sub-threshold Swing of Sub-60 mV/dec Using AlN/GaN/InGaN Coupling Channel HEMTs

〇Hao Lu¹, Bin Hou¹, Ling Yang¹, Xuerui Niu¹, Zeyan Si¹, Meng Zhang¹, Mei Wu¹, Xiaohua Ma¹, Yue Hao¹ (1.Xidian University)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:30 AM - 9:37 AM |PDF Download

[D-3-03] High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇Kosuke Ota¹, Jun Tsunoda¹, Naoya Niikura¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.The Kagami Memorial Lab. for Materials Sci. and Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:37 AM - 9:44 AM |PDF Download

[D-3-04] C-Si Interface on (111) Diamond MOSFET with Excellent N ormally-off Operation

〇Xiao Hua ZHU^1,3, Te Bi¹, Yu Fu¹, Yu Hao Chang¹, Jin Long Liu³, Cheng Ming Li³, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.The Kagami Memorial Lab. for Materials Sci. and Tech., 3.Univ. of Sci. & Tech. Beijing)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:44 AM - 9:51 AM |PDF Download

[D-3-05] Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain

〇Fuga Asai¹, Ken Kudara¹, Masakazu Arai¹, Yukiko Suzuki¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.School of Fundamental Science & Engineering Waseda Univ., 2.Kagami Memorial Research Institute for Materials Science and Technology, Waseda Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:51 AM - 9:58 AM |PDF Download

[D-3-06] Optical Detected Magnetic Resonance of Nitrogen-Vacancy Centers in Vertical Diamond Schottky Diode

〇Muhammad Hafiz bin Abu Bakar¹, Aboulaye Traore¹, Junjie Guo¹, Toshiharu Makino², Masahiko Ogura², Satoshi Yamasaki², Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.National Institute of Advance Industrial Science and Technology)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 9:58 AM - 10:05 AM |PDF Download

[D-4-01 (Invited)] Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process

〇Tsunenobu Kimoto¹, Keita Tachiki¹, Takuma Kobayashi^1,2, Yuichiro Matsushita² (1.Kyoto Univ., 2.Tokyo Inst. Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 10:45 AM - 11:15 AM |PDF Download

[D-4-02] Positive threshold voltage shift of 4H-SiC MOSFET induced by Al₂O₃/SiO₂ interface dipole layer formation

〇Tae-Hyeon Kil¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1.The Univ. of Tokyo, 2.Mitsubishi Electric Corp.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:15 AM - 11:22 AM |PDF Download

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO₂/4H-SiC(11-20) Interfaces

〇Takato Nakanuma¹, Yuu Iwakata¹, Takuji Hosoi¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:22 AM - 11:29 AM |PDF Download

[D-4-04] "Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"

〇Eiji Kagoshima¹, Wakana Takeuchi², Katsuhiro Kutsuki³, Mitsuo Sakashita⁴, Hirokazu Fujiwara¹, Osamu Nakatsuka^4,5 (1.MIRISE Technologies Corp., 2.Aichi Institute of Tech., 3.TOYOTA CENTRAL R&D LABS., Inc., 4.Graduate School of Eng., Nagoya Univ., 5.Inst. of Materials and Systems for Sustainability, Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:29 AM - 11:36 AM |PDF Download