Oral presentation

[18p-C1-1~13] 13.2 Semiconductor surfaces

Wed. Sep 18, 2013 1:00 PM - 4:30 PM C1 (TC3 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:00 PM - 1:15 PM

[18p-C1-1] Various stable surface structures on the Si(110)- (16 × 2)

^○Takahiro Yamasaki¹, Koichi Kato², Tsuyoshi Uda³, Takahisa Ohno^1,4 (NIMS¹, Toshiba R&D center², ASMS³, IIS Univ. Tokyo⁴)

1:15 PM - 1:30 PM

[18p-C1-2] EUPS observation of hydrogen passivation of dopants in Si wafers

Tomoaki Ishitsuka¹, ^○Toshihisa Tomie¹, Toshihiko Kanayama² (AIST RIIF¹, AIST²)

1:30 PM - 1:45 PM

[18p-C1-3] Satellite spectra of Si wafers observed with EUPS using 255eV EUV light for excitation

Tomoaki Ishitsuka¹, ^○Toshihisa Tomie¹ (AIST RIIF¹)

1:45 PM - 2:00 PM

[18p-C1-4] Real-time Scanning Tunneling Microscopy Observation of Ni Ion Irradiation Process on Si (111) Surface

^○Kotaro Mura¹, Takefumi Kamioka², Tetsu Kitani¹, Kenta Imazu¹, Takanobu Watanabe¹ (Waseda Univ.¹, TTI²)

2:00 PM - 2:15 PM

[18p-C1-5] Effect of Si(100) surface roughness on electrical characteristics of MOS diodes

^○Sohya Kudoh¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology¹)

2:15 PM - 2:30 PM

▲ [18p-C1-6] Investigation of Si(110) surface roughness on MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering

^○Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Tech¹)

Break （2:30 PM - 2:45 PM）

2:45 PM - 3:00 PM

△ [18p-C1-7] Stady of Absorbed Water on a Ge Wafer Surface

^○Hiroaki Kashihara¹, Hitoshi Suzuki¹, Takashi Takahagi¹, Hiroyuki Sakaue¹ (Graduate School of AdSM, Hiroshima Univ.¹)

3:00 PM - 3:15 PM

[18p-C1-8] Molecular Adsorption and Desorption Behavior on Si Surface in a Complex Ambient Atmosphere

Nobutaka Ono¹, Ken Nakagomi¹, Ayumi Sakurai¹, ^○Hitoshi Habuka¹ (Yokohama Nat. Univ.¹)

3:15 PM - 3:30 PM

△ [18p-C1-9] Ultra-low Reflectivity Si Surfaces Fabricated by Surface Structure Chemical Transfer Method

^○Daichi Irishika¹, Kentaro Imamura¹, Hikaru Kobayashi¹ (ISIR, Osaka Univ.¹)

3:30 PM - 3:45 PM

△ [18p-C1-10] Dry Etching of Si by Using Pd Catalyst and Formation of Through Holes

^○(M1)Ryoma Kawaguchi¹, Takashi Harada¹, Shigeru Ikeda¹, Michio Matsumura¹ (Research center for solar energy chemisty, Osaka univ.,¹)

3:45 PM - 4:00 PM

[18p-C1-11] Etching Rate Model of Silicon Dioxide Film Using Single Wafer Wet Etcher

^○Kosuke Mizuno¹, Shintaro Ohashi¹, Hitoshi Habuka¹, Tetsuo Kinoshita² (Yokohama Nat. Univ.¹, Pre-Tech²)

4:00 PM - 4:15 PM

[18p-C1-12] Water nozzle design for batch-type silicon wafer wet cleaner

^○Nobutaka Ono¹, Hitoshi Habuka¹, Akihiro Goto² (Yokohama Nat.Univ.¹, Pre-Tech²)

4:15 PM - 4:30 PM

[18p-C1-13] Influence of static charge on ILD layer characeristic during the cmp wetting process

^○Tomoatsu Ishibashi¹, Yoichi Shiokawa¹, Katsuhide Watanabe¹ (EBARA CORPORATION¹)

Sessions

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces