〇Kaori Watanabe¹, Naohisa Inoue^2,9, Yasunori Goto³, Takahide Sugiyama⁴, Hirofumi Seki⁵, Masumi Obuchi⁶, Hiroyuki Uno⁷, Noriyuki Fujiyama⁵, Shigeru Shimada⁸, Yuichi Kawamura⁹ (1.Systems Engineering, 2.Tokyuo U. Agri&Tech., 3.Toyota Motor Co., 4.Toyota C. L., 5.Toray Res., 6.Nanoscience, 7.S.H.I Exam., 8.Bruker, 9.Osaka P. U.)

11:45 AM - 12:00 PM

[20a-H113-9] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(11) Radiation induced intrinsic point defects and their clusters in various crystals

〇Naohisa Inoue^1,6, Yasunori Gotou², Takahide Sugiyama³, Hirofumi Seki⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyuo U. Agri&Tech., 2.Toyota Motor Co., 3.Toyota Central Res. Labs., 4.Toray Research Inc., 5.Systems Engineering Inc., 6.Osaka Pref. U.)

12:00 PM - 12:15 PM

△ [20a-H113-10] Photoluminescence analysis of impurity effects in highly doped Si

〇KEI NAKAGAWA¹, Michio Tajima¹, Atsushi Ogura¹ (1.Meiji Univ.)

12:15 PM - 12:30 PM

[20a-H113-11] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Theory of infrared laser beam refraction by free carriers

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

12:30 PM - 12:45 PM

[20a-H113-12] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Optical setup for parallel dual laser-beams

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

Oral presentation

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Mar 20, 2016 2:15 PM - 5:45 PM H113 (H)

Koji Sueoka(Okayama Pref. Univ.), Yoshifumi Yamashita(Okayama Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

2:15 PM - 2:30 PM

[20p-H113-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
- Gettering Ability of Metal Impurity Contaminated Device Fabrication Process -

〇Kazunari Kurita¹, Ryosuke Okuyama¹, Ayumi Masada¹, Takeshi Kadono¹, Ryo Hirose¹, Yoshiaki Koga¹, Hidehiko Okuda¹ (1.SUMCO CORPORATION)

2:30 PM - 2:45 PM

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Capability of projected range for Hydrogen-

〇Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO Corp.)

2:45 PM - 3:00 PM

[20p-H113-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Trapping Effect of Oxygen -

〇HIDEHIKO OKUDA¹, RYOU HIROSE¹, AYUMI MASADA¹, TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

3:00 PM - 3:15 PM

[20p-H113-4] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature-

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

3:15 PM - 3:30 PM

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

〇TAKESHI KADONO¹, RYOSUKE OKUYAMA¹, AYUMI MASADA¹, RYOU HIROSE¹, YOSHIHIRO KOGA¹, HIDEHIKO OKUDA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

3:30 PM - 3:45 PM

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)
- Development study of multi-element molecular ion implantation technique -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO Corp., 2.NISSIN ION EQUIPMENT Corp.)

4:00 PM - 4:15 PM

[20p-H113-7] Critical Stress for Generation of Slip Dislocation Developing from Scratches in Si Wafers

〇JUN FUJISE¹, TOSHIAKI ONO¹ (1.SUMCO CORPORATION)

4:15 PM - 4:30 PM

△ [20p-H113-8] Oxygen effect on dislocation multiplication in a silicon crystal

〇Wataru Fukushima¹, Bing Gao², Hirofumi Harada², Yshiji Miyamura², Satoshi Nakano², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

4:30 PM - 4:45 PM

[20p-H113-9] TEM evaluation of atomic arrangements on dislocation core in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

4:45 PM - 5:00 PM

[20p-H113-10] Evaluation of SiC crystal with laser annealing (3)

〇Hidekazu Yamamoto¹, Mizuki Uchimori¹, Fulvio Mazzamuto², Jongduk Kim³, Shuichi Ono⁴, Manabu Arai⁴ (1.Chiba Inst., 2.SCREEN/LASSE, 3.Park Systems, 4.New Japan Radio)

5:00 PM - 5:15 PM

[20p-H113-11] Quantitative analysis of crystal distortion in SiC wafer using scanning X-ray topography

〇Akio Yoneyama¹, Natsuki Yokoyama¹, Renichi Yamada¹ (1.Hitachi)

5:15 PM - 5:30 PM

[20p-H113-12] Inelastic x-ray scattering measurements of phonon dispersion and lifetimes in ScN epitaxial film

〇Hiroshi Uchiyama¹, Yuichi Oshima², Garcia Villora², Kiyoshi Shimamura² (1.JASRI/SPring8, 2.NIMS)

5:30 PM - 5:45 PM

▲ [20p-H113-13] X-Ray Determination of the Structure of Ice Confined in Carbon Nanotubes

〇(PC)Gregory A Pilgrim^1,2, Todd D Krauss¹ (1.Univ. of Rochester, 2.JSPS International Research Fellow)

Poster presentation

[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P11 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:30 PM - 3:30 PM

[21p-P11-1] The formation of hydrogen-related donors in n-type silicon using proton irradiation and hydrogen-plasma treatment

〇AKIRA KIYOI¹, TSUYOSHI KAWAKAMI¹, TADAHARU MINATO¹, MASAYOSHI TARUTANI¹ (1.Mitsubishi Electric Corp.)

1:30 PM - 3:30 PM

[21p-P11-2] Effect of substitutional dopant on point defect concentration in growing single Ge crystal

〇Shunta Yamaoka¹, Koji Kobayashi¹, Koji Sueoka¹, Jan Vanhellemont² (1.Okayama Pref. Univ., 2.Ghent Univ.)

1:30 PM - 3:30 PM

[21p-P11-3] Dopant impact on formation energy of intrinsic point defects in single crystal silicon

〇kouji kobayashi¹, Shunta Yamaoka¹, Koji Sueoka¹, Jan Vanhellemont² (1.Okayama Pref. Univ., 2.Ghent Univ.)

1:30 PM - 3:30 PM

[21p-P11-4] First principles calculation on metal diffusion in vicinity of dopant in Si crystal

〇atsuhiro yamada¹, Sho Shiraswa¹, Koji Sueoka¹ (1.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[21p-P11-5] First principles calculation on stability of gettering sites induced by C₃H₅ cluster ion implantations

Sho Shirasawa¹, 〇Kouji Sueoka¹ (1.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[21p-P11-6] Investigation of the 1SSF origin in 4H-SiC epitaxial layers

〇Yu Nakamura¹, Tomoaki Furusho¹, Shigehisa Yamamoto¹ (1.Mitsubishi Electric Corp.)

1:30 PM - 3:30 PM

[21p-P11-7] Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography and local rocking curve imaging

〇Yumiko Takahashi¹, Keiichi Hirano¹, Takayoshi Shimura², Jun-ichi Yoshimura¹, Shinji Nagamachi³ (1.KEK-PF, 2.Osaka Univ., 3.Nagamachi Science Laboratory Co., Ltd.)

1:30 PM - 3:30 PM

△ [21p-P11-8] Evaluation of SiC crystal with laser annealing (2)

〇mizuki uchimori¹, Fulvio Mazzamuto², Tetsuya Nagai³, Katsuhiko Nakai³, Shuichi Ono⁴, Manabu Arai⁴, Hidekazu Yamamoto¹ (1.Chiba Institute of Technology, 2.SCREEN Semiconductor Solutions/LASSE2, 3.Nippon Steel & Sumikin Technology, 4.New Japan Radio Co., Ltd)

1:30 PM - 3:30 PM

△ [21p-P11-9] Evaluation of GaN wafer for power devices by Raman spectroscopy (5)

〇(M1)naoki ikeda¹, Hidekazu Yamamoto¹ (1.Chiba Institute of Technology)

1:30 PM - 3:30 PM

[21p-P11-10] Evaluation of GaN wafer for power devices by Raman spectroscopy (6)

〇Kazuya Agui¹, Hidekazu Yamamoto¹ (1.Chiba Inst.of Tech.)

1:30 PM - 3:30 PM

[21p-P11-11] Change in photoemission yield of alkali halide after exposure to X-ray

〇Daisuke Yamashita¹ (1.Riken Keiki)

Sessions

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

△ [20a-H113-10] Photoluminescence analysis of impurity effects in highly doped Si

[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)-Trapping Capability of projected range for Hydrogen-

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)- Development study of multi-element molecular ion implantation technique -

△ [20p-H113-8] Oxygen effect on dislocation multiplication in a silicon crystal

▲ [20p-H113-13] X-Ray Determination of the Structure of Ice Confined in Carbon Nanotubes

[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

△ [21p-P11-8] Evaluation of SiC crystal with laser annealing (2)

△ [21p-P11-9] Evaluation of GaN wafer for power devices by Raman spectroscopy (5)

Authentication

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Capability of projected range for Hydrogen-

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)
- Development study of multi-element molecular ion implantation technique -