Oral presentation

[20p-S421-1~12] 17.3 Layered materials

Sun. Mar 20, 2016 1:45 PM - 4:45 PM S421 (S4)

Keiji Ueno(Saitama Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[20p-S421-1] Electric Field Effects on Electronic Properties at Silicene-Amine Hetero-interface

〇Kenji Iida¹, Masashi Noda¹, Katsuyuki Nobusada¹ (1.IMS)

2:00 PM - 2:15 PM

△ [20p-S421-2] Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

2:15 PM - 2:30 PM

△ [20p-S421-3] Bandgap modulation at MoS₂/WS₂-based semiconductor heterojunction interfaces

〇(M2)Yu Kobayashi¹, Shoji Yoshida², Ryuji Sakurada², Testuki Saito¹, Kenji Watanabe³, Takashi Taniguchi³, Yutaka Maniwa¹, Hidemi Shigekawa², Yasumitsu Miyata^1,4 (1.Tokyo Metropolitan Univ., 2.Tsukuba Univ., 3.NIMS, 4.JST PRESTO)

2:30 PM - 2:45 PM

[20p-S421-4] Photoluminescence Modulation of Atomic Layered Transition
Metal Dichalcogenides Hetero Structures by Field Effect Doping

〇Shinichiro Mouri¹, Wenjin Zhang¹, Yuhei Miyauchi¹, Kazunari Matsuda¹ (1.IAE, Kyoto Univ.)

2:45 PM - 3:00 PM

[20p-S421-5] Geometric and Electronic Properties of thin-layer GeSe and GeSe/MoS₂ Heterostructures

〇Mari Ohfuti¹ (1.Fujitsu Labs.)

3:00 PM - 3:15 PM

△ [20p-S421-6] Fabrication of high performance optoelectrical device with mild oxygen plasma treated few-layer WSe₂

〇Reito Nagai¹, Kato Toshiaki¹, Kaneko Toshiro¹ (1.Dept. of Electronic Eng., Tohoku Univ.)

3:15 PM - 3:30 PM

△ [20p-S421-7] Evaluation of CVD-MoS₂/SiO₂ Interaction and Dual-Gate Modulation by Fully Covering TG

〇(M1)Sora Kurabayashi¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.PRESTO-JST)

3:30 PM - 3:45 PM

[20p-S421-8] Experimental Study on Annealing Processes for MoS₂ FETs

〇kosuke sano¹, Nobuhiko Adachi¹, Yoshihisa Shimokawa¹, Tsunaki Takahashi^1,2, Ken Uchida^1,2 (1.Keio Univ., 2.JST CREST)

3:45 PM - 4:00 PM

[20p-S421-9] Ballistic Modeling of Silicane and Germanane CMOS Transistors

〇SHIROU KANEKO¹, Naosuke Oka¹, Hideaki Tsuchiya¹, Matsuto Ogawa¹ (1.Kobe Univ.)

4:00 PM - 4:15 PM

△ [20p-S421-10] Improvement of Photovoltaic Features of Few-Layer WSe₂ Schottky Type Solar Cells

〇(M2)Toshiki Akama¹, Toshiaki Kato¹, Toshiro Kaneko¹ (1.Dept. of Electronic Eng., Tohoku Univ.)

4:15 PM - 4:30 PM

[20p-S421-11] Local characterization of MoS₂-single layer graphene hetero structure for gas response

〇yuta sato¹, Kouhei Oi¹, Takuji Asashita¹, Hiroshi Tabata¹, Osamu Kubo¹, Mitsuhiro Katayama¹ (1.Grad. Sch. Eng., Osaka Univ.)

4:30 PM - 4:45 PM

△ [20p-S421-12] Field effect transistor of thin anatase obtained through solid state transformation of Ti_0.87O₂ nanosheet

〇Shunya Sekizaki¹, Minoru Osada², Sasaki Takayoshi², Kosuke Nagashio^1,3 (1.Tokyo Univ, 2.NIMS, 3.PRESTO-JST)

Oral presentation

[22a-S421-1~11] 17.3 Layered materials

Tue. Mar 22, 2016 9:00 AM - 12:00 PM S421 (S4)

Yasumitsu Miyata(Tokyo Metropolitan Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[22a-S421-1] [Young Scientist Presentation Award Speech] Surface Oxides on WSe₂ as P-Type Contacts and Dopants

〇Mahito Yamamoto¹, Shu Nakaharai¹, Keiji Ueno², Kazuhito Tsukagoshi¹ (1.NIMS, 2.Saitama Univ.)

9:15 AM - 9:30 AM

[22a-S421-2] Monolayer-to-bilayer transformation of silicenes

〇RITSUKO YAOKAWA¹, Tetsu Ohsuna¹, Hideyuki Nakano^1,2 (1.TOYOTA CENTRAL R&D LABS., 2.JST PRESTO)

9:30 AM - 9:45 AM

[22a-S421-3] Growth process of a h-BN film by diffusion and precipitation

〇Satoru Suzuki¹, Yui Ogawa¹, Shengnan Wang¹, Hideki Yamamoto¹ (1.NTT Basic Res. Labs.)

9:45 AM - 10:00 AM

▲ [22a-S421-4] Synthesis of large-area hexagonal boron nitride films using chemical vapor deposition

VICTORIA HAMILTON¹, 〇SHENGNAN WANG¹, SATORU SUZUKI¹, HIROKI HIBINO^1,2, HIDEKI YAMAMOTO¹ (1.NTT Basic Research Labs., 2.Kwansei Gakuin Univ.)

10:00 AM - 10:15 AM

[22a-S421-5] Dependence of h-BN multi-layers synthesis on catalyst films with chemical vapor deposition

〇Daiyu Kondo^1,2, Kenjiro Hayashi^1,2, Masako Kataoka^1,2, Taisuke Iwai^1,2, Shintaro Sato^1,2 (1.Fujitsu Labs., 2.Fujitsu)

10:15 AM - 10:30 AM

▼ [22a-S421-6] Synthesis of BCN layers and anisotropic etching for nanoribbon fabrication

〇(DC)Riteshkumar Ratneshkumar Vishwakarma¹, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya Inst.Technol.)

10:45 AM - 11:00 AM

△ [22a-S421-7] The large-scaled and integrated synthesis of Monolayer and Single Crystal WS₂

〇TOMOYUKI TAKAHASHI¹, Toshiaki Kato¹, Toshiro Kaneko¹ (1.Tohoku Univ.)

11:00 AM - 11:15 AM

[22a-S421-8] MBE growth of MoSe₂/WSe₂ heterostructures on GaAs substrates

〇Koji Onomitsu¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT Basic Research Laboratories)

11:15 AM - 11:30 AM

[22a-S421-9] Challenge to the fabrication of molybdenum disulfide (MoS₂) layer film by mist CVD

〇(M1)Shota Sato¹, Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Technol., Intelligent Mech. Sys. Eng., 2.Kochi Univ. of Technol., Res. Inst.)

11:30 AM - 11:45 AM

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS₂ Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method

〇SEIYA ISHIHARA¹, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, KOHEI SUDA¹, TAKUMI OHASHI², KENTAROU MATSUURA², HIDEAKI MACHIDA³, MASATO ISHIKAWA³, HIROSHI SUDOH³, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd.)

11:45 AM - 12:00 PM

▼ [22a-S421-11] Passivation of Phosphorene in Ambient Conditions by Encapsulation with Monolayer Hexagonal Boron Nitride Grown by Chemical Vapor Deposition Technique

〇(B)Sapna Sinha¹, Yuya Takabayashi¹, Haruka Omachi¹, Hisanori Shinohara¹, Ryo Kitaura¹ (1.Nagoya Univ.)

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[20p-S421-1~12] 17.3 Layered materials

[20p-S421-1] Electric Field Effects on Electronic Properties at Silicene-Amine Hetero-interface

△ [20p-S421-2] Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride

△ [20p-S421-3] Bandgap modulation at MoS₂/WS₂-based semiconductor heterojunction interfaces

[20p-S421-4] Photoluminescence Modulation of Atomic Layered Transition
Metal Dichalcogenides Hetero Structures by Field Effect Doping

[20p-S421-5] Geometric and Electronic Properties of thin-layer GeSe and GeSe/MoS₂ Heterostructures

△ [20p-S421-6] Fabrication of high performance optoelectrical device with mild oxygen plasma treated few-layer WSe₂

△ [20p-S421-7] Evaluation of CVD-MoS₂/SiO₂ Interaction and Dual-Gate Modulation by Fully Covering TG

[20p-S421-8] Experimental Study on Annealing Processes for MoS₂ FETs

[20p-S421-9] Ballistic Modeling of Silicane and Germanane CMOS Transistors

△ [20p-S421-10] Improvement of Photovoltaic Features of Few-Layer WSe₂ Schottky Type Solar Cells

[20p-S421-11] Local characterization of MoS₂-single layer graphene hetero structure for gas response

△ [20p-S421-12] Field effect transistor of thin anatase obtained through solid state transformation of Ti_0.87O₂ nanosheet

[22a-S421-1~11] 17.3 Layered materials

[22a-S421-1] [Young Scientist Presentation Award Speech] Surface Oxides on WSe₂ as P-Type Contacts and Dopants

[22a-S421-2] Monolayer-to-bilayer transformation of silicenes

[22a-S421-3] Growth process of a h-BN film by diffusion and precipitation

▲ [22a-S421-4] Synthesis of large-area hexagonal boron nitride films using chemical vapor deposition

[22a-S421-5] Dependence of h-BN multi-layers synthesis on catalyst films with chemical vapor deposition

▼ [22a-S421-6] Synthesis of BCN layers and anisotropic etching for nanoribbon fabrication

△ [22a-S421-7] The large-scaled and integrated synthesis of Monolayer and Single Crystal WS₂

[22a-S421-8] MBE growth of MoSe₂/WSe₂ heterostructures on GaAs substrates

[22a-S421-9] Challenge to the fabrication of molybdenum disulfide (MoS₂) layer film by mist CVD

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS₂ Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method

▼ [22a-S421-11] Passivation of Phosphorene in Ambient Conditions by Encapsulation with Monolayer Hexagonal Boron Nitride Grown by Chemical Vapor Deposition Technique

Authentication

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[20p-S421-1~12] 17.3 Layered materials

△ [20p-S421-2] Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride

△ [20p-S421-3] Bandgap modulation at MoS2/WS2-based semiconductor heterojunction interfaces

△ [20p-S421-6] Fabrication of high performance optoelectrical device with mild oxygen plasma treated few-layer WSe2

△ [20p-S421-7] Evaluation of CVD-MoS2/SiO2 Interaction and Dual-Gate Modulation by Fully Covering TG

△ [20p-S421-10] Improvement of Photovoltaic Features of Few-Layer WSe2 Schottky Type Solar Cells

△ [20p-S421-12] Field effect transistor of thin anatase obtained through solid state transformation of Ti0.87O2 nanosheet

[22a-S421-1~11] 17.3 Layered materials

▲ [22a-S421-4] Synthesis of large-area hexagonal boron nitride films using chemical vapor deposition

▼ [22a-S421-6] Synthesis of BCN layers and anisotropic etching for nanoribbon fabrication

△ [22a-S421-7] The large-scaled and integrated synthesis of Monolayer and Single Crystal WS2

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS2 Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method

▼ [22a-S421-11] Passivation of Phosphorene in Ambient Conditions by Encapsulation with Monolayer Hexagonal Boron Nitride Grown by Chemical Vapor Deposition Technique

Authentication

△ [20p-S421-3] Bandgap modulation at MoS₂/WS₂-based semiconductor heterojunction interfaces

△ [20p-S421-6] Fabrication of high performance optoelectrical device with mild oxygen plasma treated few-layer WSe₂

△ [20p-S421-7] Evaluation of CVD-MoS₂/SiO₂ Interaction and Dual-Gate Modulation by Fully Covering TG

△ [20p-S421-10] Improvement of Photovoltaic Features of Few-Layer WSe₂ Schottky Type Solar Cells

△ [20p-S421-12] Field effect transistor of thin anatase obtained through solid state transformation of Ti_0.87O₂ nanosheet

△ [22a-S421-7] The large-scaled and integrated synthesis of Monolayer and Single Crystal WS₂

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS₂ Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method