Poster presentation

[15p-P12-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P12 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

4:00 PM - 6:00 PM

[15p-P12-1] Effect of Light Concentrator Irradiation on Carrier Mobility of n- and p- Type Si Substrates by Hall Measurements

〇Shuya Tategami¹, Kenjiro Takauchi¹, Naoki Tokuda¹, Hidetoshi Suzuki¹, Tetsuo Ikari¹, Kensuke Nishioka¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazalki)

4:00 PM - 6:00 PM

[15p-P12-2] High Density Formation of Si Quantum Dots with Ge core on Si Sub-micron Patterned Si Wire Structures and Their Electroluminescence

〇Lei Gao¹, Mitsuhisa Ikeda¹, Kentaro Yamada¹, Katsunori Makihara¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[15p-P12-3] first-principles study on leakage current caused by oxygen vacancies at HfO₂/SiO₂/Si interface

〇(M1)Kensuke Takagi¹, Tomoya Ono^1,2 (1.Grad. School of Pure and Appl. Soc. Univ. of Tsukuba, 2.Center for Comp. of Soc. Univ. of Tsukuba)

Oral presentation

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[16p-E206-1] Analysis of ultra-trace metal in pure water using metal adsorption to PFA bottle

〇Masato Nakatsu¹ (1.Mie Fujitsu Semiconductor)

2:00 PM - 2:15 PM

[16p-E206-2] Behavior analysis of Si etching process with the HF/HNO₃ mixture by single spin wafer processor (2)

〇Takashi Oinoue¹, Suguru Saito², Atsushi Okuyama², Yoshiya Hagimoto², Hayato Iwamoto² (1.Sony Semiconductor Manufacturing, 2.Sony Semiconductor Solutions)

2:15 PM - 2:30 PM

△ [16p-E206-3] Analysis of the Ge(111) surface structure treated by HF aq. solution with Na₂S₂O₃

〇Yusuke Fujishima¹, Hitoshi Suzuki¹, Hiroyuki Sakaue¹ (1.Hiroshima Univ.)

2:30 PM - 2:45 PM

[16p-E206-4] A study on H₂ concentration dependence on the Si surface flattening with Ar/H₂ annealing and its device applications

〇Masahiro Tsukazaki¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

2:45 PM - 3:00 PM

△ [16p-E206-5] Improvement of device characteristic for Hf-based MONOS structure by Si(100) surface flattening

〇(DC)Sohya Kudoh¹, Masahiro Tsukazaki¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

3:15 PM - 3:30 PM

△ [16p-E206-6] Effects of Quantity of SiH Groups on SiO₂/Si Interface Trap Buildup at Low-Dose-Rate Irradiation

〇Shintaro Toguchi^1,2, Takahiro Makino³, Takeshi Ohshima³, Daisuke Kobayashi², Kazuyuki Hirose^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA, 3.QST)

3:30 PM - 3:45 PM

△ [16p-E206-7] Measurement of sample currents for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

〇Takahiro Harie^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

3:45 PM - 4:00 PM

[16p-E206-8] Evaluation of potential gradient and active dopant concentration in inversion layer formed in As implanted Si(001) by subband measurement using ARPES

〇Yudai Higa¹, Sakura Takeda¹, Tatsuya Ebato¹, Masatoshi Yoneda¹, Akiho Fujinaka¹, Kazuho Morita¹, Natsuki Morimoto¹, Artoni Kevin Ang¹, Hiroshi Daimon¹, Kazuo Tsutsui² (1.Nara Institute of Science and Technology, 2.Tokyo Institute of Technology)

4:00 PM - 4:15 PM

[16p-E206-9] Evaluation of Potential Distribution of Multiple Stacked Si Quantum Dots
by Hard X-ray Photoelectron Spectroscopy

〇Yuta Nakashima¹, Daichi Takeuchi^1,2, Katsunori Makihara¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.JSPS Research Fellow)

4:15 PM - 4:30 PM

△ [16p-E206-10] Evaluation of Anisotropic Biaxial Stress in Trench Structure by Raman Spectroscopy

〇Takahiro Suzuki¹, Ryo Yokogawa¹, Kohei Oasa², Tatsuya Nishiwaki², Takeshi Hamamoto², Atsushi Ogura¹ (1.Meiji Univ., 2.Toshiba Corp.)

4:30 PM - 4:45 PM

[16p-E206-11] Luminescence Studies of High Density Si Quantum Dots with Ge Core

〇Kentaro Yamada¹, Katsunori Makihara¹, Mitsuhisa Ikeda¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

5:00 PM - 5:15 PM

[16p-E206-12] Buckling analysis of fine pattern structures of a semiconductor device using molecular dynamics and finite element methods

〇Kenji Koshiishi¹, Reiko Saito¹, Sachiyo Ito¹, Yohei Tamura², Shunsuke Imaizumi², So Takamoto², Satosh Izumi² (1.TOSHIBA, 2.Tokyo Univ.)

5:15 PM - 5:30 PM

[16p-E206-13] Study of Domain Division Method for Simulation of Sensor Array

〇Kazuya Matsuzawa¹, Takahisa Tanaka^1,2, Ken Uchida^1,2 (1.TRDEC, Keio Univ., 2.E&E Eng., Keio Univ.)

5:30 PM - 5:45 PM

△ [16p-E206-14] Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation

〇Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:45 PM - 6:00 PM

[16p-E206-15] Prediction of Short Channel Effects in Negative Capacitance Transistors by Device Simulation

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Hiroyuki Ota¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

6:00 PM - 6:15 PM

[16p-E206-16] Tolerance for Single Event Effects of Tunnel FET CMOS Inverter Circuit

〇Yan Wu¹, Yuseke Wada¹, Yuta Iwanami¹, Junichi Kanayama¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

6:15 PM - 6:30 PM

△ [16p-E206-17] NEGF Study on Thermoelectric Properties of 1D Nanostructures

〇(B)Yuma Kajiwara¹, Nobuya Mori¹ (1.Osaka Univ.)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-P12-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-P12-1] Effect of Light Concentrator Irradiation on Carrier Mobility of n- and p- Type Si Substrates by Hall Measurements

[15p-P12-2] High Density Formation of Si Quantum Dots with Ge core on Si Sub-micron Patterned Si Wire Structures and Their Electroluminescence

[15p-P12-3] first-principles study on leakage current caused by oxygen vacancies at HfO₂/SiO₂/Si interface

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1] Analysis of ultra-trace metal in pure water using metal adsorption to PFA bottle

[16p-E206-2] Behavior analysis of Si etching process with the HF/HNO₃ mixture by single spin wafer processor (2)

△ [16p-E206-3] Analysis of the Ge(111) surface structure treated by HF aq. solution with Na₂S₂O₃

[16p-E206-4] A study on H₂ concentration dependence on the Si surface flattening with Ar/H₂ annealing and its device applications

△ [16p-E206-5] Improvement of device characteristic for Hf-based MONOS structure by Si(100) surface flattening

△ [16p-E206-6] Effects of Quantity of SiH Groups on SiO₂/Si Interface Trap Buildup at Low-Dose-Rate Irradiation

△ [16p-E206-7] Measurement of sample currents for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

[16p-E206-8] Evaluation of potential gradient and active dopant concentration in inversion layer formed in As implanted Si(001) by subband measurement using ARPES

[16p-E206-9] Evaluation of Potential Distribution of Multiple Stacked Si Quantum Dots
by Hard X-ray Photoelectron Spectroscopy

△ [16p-E206-10] Evaluation of Anisotropic Biaxial Stress in Trench Structure by Raman Spectroscopy

[16p-E206-11] Luminescence Studies of High Density Si Quantum Dots with Ge Core

[16p-E206-12] Buckling analysis of fine pattern structures of a semiconductor device using molecular dynamics and finite element methods

[16p-E206-13] Study of Domain Division Method for Simulation of Sensor Array

△ [16p-E206-14] Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation

[16p-E206-15] Prediction of Short Channel Effects in Negative Capacitance Transistors by Device Simulation

[16p-E206-16] Tolerance for Single Event Effects of Tunnel FET CMOS Inverter Circuit

△ [16p-E206-17] NEGF Study on Thermoelectric Properties of 1D Nanostructures

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-P12-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [16p-E206-3] Analysis of the Ge(111) surface structure treated by HF aq. solution with Na2S2O3

△ [16p-E206-5] Improvement of device characteristic for Hf-based MONOS structure by Si(100) surface flattening

△ [16p-E206-6] Effects of Quantity of SiH Groups on SiO2/Si Interface Trap Buildup at Low-Dose-Rate Irradiation

△ [16p-E206-7] Measurement of sample currents for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

△ [16p-E206-10] Evaluation of Anisotropic Biaxial Stress in Trench Structure by Raman Spectroscopy

△ [16p-E206-14] Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation

△ [16p-E206-17] NEGF Study on Thermoelectric Properties of 1D Nanostructures

Authentication

△ [16p-E206-3] Analysis of the Ge(111) surface structure treated by HF aq. solution with Na₂S₂O₃

△ [16p-E206-6] Effects of Quantity of SiH Groups on SiO₂/Si Interface Trap Buildup at Low-Dose-Rate Irradiation