Session information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 21, 2018 1:00 PM - 5:15 PM 135 (135)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

[21p-135-1] Evaluation of reliability using the dielectric polarization characteristic in Pulse Photoconductive Measurement

〇Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Narumi Abe¹, Yuki Kumagae¹, Yuichiro Shimazu¹, Kotaro Nagatomo², Shunsuke Nakamura², Yusuke Nakayama², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

1:15 PM - 1:30 PM

[21p-135-2] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Hiroki Matsuyama¹, Shotaro Kuzukawa¹, Narumi Abe¹, Yuki Kumagae¹, Yusuke Nakayama², Shunsuke Nakamura², Kotaro Nagatomo², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.Graduate school of science and technology Kumamoto Univ., 2.Kumamoto Univ.)

1:30 PM - 1:45 PM

△ [21p-135-3] Multi-level 2-bit/cell operation utilizing Hf-based MONOS device

〇(P)Sohya Kudoh¹, Shin Ishimatsu¹, Yusuke Horiuchi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

1:45 PM - 2:00 PM

[21p-135-4] Substrate orientation dependence of Si surface atomically-flattening by annealing in Ar/H₂ ambient

〇Yusuke Horiuchi¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

2:00 PM - 2:15 PM

▲ [21p-135-5] Oxidation delay at the edge of 3-dimensional (3D) nano-structured silicon

〇ShuJun YE¹, Tetsuo Endoh¹ (1.Tohoku University)

2:15 PM - 2:30 PM

▼ [21p-135-6] Pole figures as tools for understanding film misorientation in Group IV thin films fabricated by aluminum-induced crystallization

〇(PC)Mel Hainey¹, Yoann Robin², Hiroshi Amano², Noritaka Usami¹ (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:30 PM - 2:45 PM

[21p-135-7] Influence of hole lifetime of n-SiC epitaxial layer on pn diode characteristics

〇(M1)Kyomin Sasaki¹, Takuya Hoshii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1.Tokyo Tech)

2:45 PM - 3:00 PM

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

〇(D)Efi Dwi Indari^1,2, Yoshiyuki Yamashita^1,2, Takahiro Nagata¹, Shigenori Ueda^1,3, Ryu Hasunuma⁴, Kikuo Yamabe⁴ (1.NIMS, 2.Kyushu Univ, 3.SPring-8, 4.Univ of Tsukuba)

3:15 PM - 3:30 PM

[21p-135-9] Temperature Influence on Adsorption and Desorption of Organic Molecules on Silicon
Surface

〇Kenta Hori¹, Zhou Yifan¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

3:30 PM - 3:45 PM

△ [21p-135-10] Fundamental Study on Graphene-Assisted Chemical Etching of Ge Surface
- Temperature Dependence of Etching Rate and Evaluation of Activation Energy -

〇Tomoki Hirano¹, Yuki Nakata¹, Hiroto Yamashita¹, Shaoxian Li¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

▲ [21p-135-11] Lateral etching of HfN_0.5 narrow line utilizing diluted HF solution

〇(M1)Yizhe Ding¹, Rengie Mark D Mailig¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

4:00 PM - 4:15 PM

[21p-135-12] Development of Alkaline Solution generated by Electrolysis of Organic Ammonium Salt for Wet and Cleaning Process in Semiconductor Manufacturing
-Elucidation of hypochlorite ion decomposition reaction mechanism by organic cation species-

〇Takahiro Kanai¹, Yuuji Nagashima¹, Hideaki Hirabayashi², Masaaki Hirakawa³ (1.Shibaura mechatronics Corp., 2.Toshiba Materials Co.,Ltd., 3.Toshiba Corp.)

4:15 PM - 4:30 PM

[21p-135-13] Visualization of real contact area of PVA brush using total reflected light

〇(M2)Masanao Hanai¹, Toshiyuki Sanada¹, Hirokuni Hiyama², Akira Fukunaga² (1.Shizuoka Univ., 2.Ebara Corp.)

4:30 PM - 4:45 PM

[21p-135-14] Analysis of adhesion behavior of a silica abrasive grain to silicon oxide film by molecular dynamics simulations

〇Koichi Masuya¹, Masashi Obuchi¹, Satomi Hamada¹, Masuhiro Mikami², Chikako Takatoh¹ (1.Ebara Corp., 2.Keio Univ.)

4:45 PM - 5:00 PM

[21p-135-15] On visualization of water flow of cutting part of dicing

〇(M2)Daisuke Ushijima¹, Kai Haruki¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao¹ (1.Kumamoto Univ.)

5:00 PM - 5:15 PM

[21p-135-16] Water Flow Recirculation Design in Batch-Type Silicon Wafer Wet Cleaner

〇Miya Matsuo¹, Kento Miyazaki¹, Shogo Okuyama¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the back of the name badge.
The password will be sent to all JSAP members in March 2019.

Please log in with your participant account.
» Participant Log In

▲