Symposium (Oral)

[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 141 (141+142)

Tomoaki Yamada(Nagoya Univ.), Shosuke Fujii(Toshiba Memory)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 2:00 PM

[20p-141-1] Phase Stability of HfO₂-based Ferroelectric Materials and Their Property Control

〇Hiroshi Funakubo¹, Takao Shimizu¹, Takanori Mimura¹ (1.Tokyo Tech.)

2:00 PM - 2:30 PM

[20p-141-2] Formation of ferroelectric Hf_xZr₁_-xO₂ thin films using ZrO₂-seed layer

〇Toshihide Nabatame¹, Takashi Onaya^1,2,3, Naomi Sawamoto², Akihiko Ohi¹, Naoki Ikeda¹, Atsushi Ogura² (1.NIMS, 2.Meiji University, 3.JSPS Research Fellow)

2:30 PM - 3:00 PM

[20p-141-3] Why HfO₂ thin films exhibit ferroelectric properties?

〇Akira Toriumi¹, Shinji Migita² (1.Univ. Tokyo, 2.AIST)

3:00 PM - 3:15 PM

[20p-141-4] HfO₂ Formation on Heavily Doped Si(100) Substrate by RF Magnetoron Sputtering

〇(M1)Masakazu Kataoka¹, Min Gee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

3:15 PM - 3:30 PM

▼ [20p-141-5] Electrical characteristics of ferroelectric undoped HfO₂directly deposited on Si(100) utilizing Kr/O₂ sputtering

〇(D)MinGee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

3:30 PM - 3:45 PM

[20p-141-6] STEM-EELS analysis of polar orthorhombic phase of Hafnia-based thin films

〇Takanori Kiguchi¹, Takahisa Shiraishi¹, Takanori Mimura², Takao Shimizu², Hiroshi Funakubo², Toyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

3:45 PM - 4:00 PM

[20p-141-7] Trace of Phase Transformation in Hf-Zr-O Films Investigated by Low-Temperature and Long-Time Annealing

〇Shinji Migita¹, Hiroyuki Ota¹, Keisuke Shibuya¹, Hiroyuki Yamada¹, Akihito Sawa¹, Takashi Matsukawa¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

4:15 PM - 4:45 PM

[20p-141-8] Prospect of the HfO₂ ferroelectric thin films for the use of ferroelectric gate transistor

〇Norifumi Fujimura¹, Kenshi Takada¹, Takeshi Yoshimura¹ (1.Osaka Pref. Univ.)

4:45 PM - 5:15 PM

[20p-141-9] Perspective and Challenges in Ferroelectric Negative Capacitance Transistors highlighted by TCAD Simulation

〇Hiroyuki Ota¹, Tsutomu Ikegami¹, Junichi Hattori¹, Hidehiro Asai¹, Koichi Fukuda¹, Kazuhiko Endo¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

5:15 PM - 5:45 PM

[20p-141-10] Innovation of New Logic and Memory Devices Enabled by Ferroelectric HfO₂

〇Masaharu Kobayashi¹ (1.IIS, Univ. Tokyo)

5:45 PM - 6:00 PM

[20p-141-11] Low Voltage Operation of Ferroelectric-Gate FETs using HfO₂Ferroelectrics

〇Shinji Migita¹, Hiroyuki Ota¹, Hiroyuki Yamada¹, Keisuke Shibuya¹, Akihito Sawa¹, Takashi Matsukawa¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

6:00 PM - 6:15 PM

△ [20p-141-12] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

6:15 PM - 6:30 PM

▼ [20p-141-13] Ferroelectric Neuron for Feedforward Neural Network Application

〇(D)FEI MO¹, Tagawa Yusaku¹, Saraya Takuya¹, Hiramoto Toshiro¹, Kobayashi Masaharu¹ (1.Tokyo univ.)

Sessions

Symposium » Trends of ferroelectric HfO₂ technologies

[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

[20p-141-1] Phase Stability of HfO₂-based Ferroelectric Materials and Their Property Control

[20p-141-2] Formation of ferroelectric Hf_xZr₁_-xO₂ thin films using ZrO₂-seed layer

[20p-141-3] Why HfO₂ thin films exhibit ferroelectric properties?

[20p-141-4] HfO₂ Formation on Heavily Doped Si(100) Substrate by RF Magnetoron Sputtering

▼ [20p-141-5] Electrical characteristics of ferroelectric undoped HfO₂directly deposited on Si(100) utilizing Kr/O₂ sputtering

[20p-141-6] STEM-EELS analysis of polar orthorhombic phase of Hafnia-based thin films

[20p-141-7] Trace of Phase Transformation in Hf-Zr-O Films Investigated by Low-Temperature and Long-Time Annealing

[20p-141-8] Prospect of the HfO₂ ferroelectric thin films for the use of ferroelectric gate transistor

[20p-141-9] Perspective and Challenges in Ferroelectric Negative Capacitance Transistors highlighted by TCAD Simulation

[20p-141-10] Innovation of New Logic and Memory Devices Enabled by Ferroelectric HfO₂

[20p-141-11] Low Voltage Operation of Ferroelectric-Gate FETs using HfO₂Ferroelectrics

△ [20p-141-12] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory

▼ [20p-141-13] Ferroelectric Neuron for Feedforward Neural Network Application

Authentication

Sessions

Symposium » Trends of ferroelectric HfO2 technologies

[20p-141-1~13] Trends of ferroelectric HfO2 technologies

▼ [20p-141-5] Electrical characteristics of ferroelectric undoped HfO2 directly deposited on Si(100) utilizing Kr/O2 sputtering

△ [20p-141-12] Clarification of Endurance Failure Mechanisms for HfO2-based Ferroelectric Tunnel Junction Memory

▼ [20p-141-13] Ferroelectric Neuron for Feedforward Neural Network Application

Authentication

Symposium » Trends of ferroelectric HfO₂ technologies

[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

▼ [20p-141-5] Electrical characteristics of ferroelectric undoped HfO₂directly deposited on Si(100) utilizing Kr/O₂ sputtering

△ [20p-141-12] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory