Symposium (Oral)

[19p-G203-1~7] Is Ge substituting for Si?

Mon. Mar 19, 2018 1:30 PM - 5:10 PM G203 (63-203)

Toshifumi Irisawa(AIST), Tsutomu Tezuka(TOSHIBA), Kazuhiko Endo(AIST)

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▲：英語発表
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1:30 PM - 2:00 PM

▲ [19p-G203-1] Why don’t you enjoy Ge CMOS more?

〇Akira Toriumi¹ (1.Univ. Tokyo)

2:00 PM - 2:30 PM

▲ [19p-G203-2] Ge NW FETs Fabrication

〇Yao-Jen Lee Lee¹, F.-J. Hou¹, P.-J. Sung¹, M.-S. Yeh¹ (1.NDL)

2:30 PM - 3:00 PM

▲ [19p-G203-3] High quality UTB GeOI by HEtero-Layer-Lift-Off (HELLO) technology for future Ge CMOS application

〇Wen Hsin Chang¹, Toshifumi Irisawa¹, Hiroyuki Ishii¹, Hiroyuki Hattori¹, Hiroyuki Ota¹, Hideki Takagi¹, Yuichi Kurashima¹, Noriyuki Uchida¹, Tatsuro Maeda¹ (1.AIST)

3:10 PM - 3:40 PM

▲ [19p-G203-4] Prospects and Challenges for Ge MOSFETs

〇Shinichi Takagi¹, Kwang-Won Jo¹, Wu-Kang Kim¹, Mengnan Ke¹, Kimihiko Kato¹, Mitsuru Takenaka¹ (1.Univ. Tokyo)

3:40 PM - 4:10 PM

▲ [19p-G203-5] Enabling Improved Contact Resistivity for Si, Ge and GeSn Technology

〇Yung-Hsien Wu¹, Kuen-Yi Chen¹, Chuan-Pu Chou¹, Shih-Chieh Teng¹ (1.Natl. Tsing Hua Univ.)

4:10 PM - 4:40 PM

▲ [19p-G203-6] Atomic Layer Defect-free Ge Fin Fabrication by Neutral Beam Processes

〇Seiji Samukawa^1,2 (1.AIMR, Tohoku Univ., 2.IFS, Tohoku Univ.)

4:40 PM - 5:10 PM

▲ [19p-G203-7] Spin-dependent transport in ferromagnet-germanium structures for spintronic applications

〇Kohei Hamaya^1,2 (1.GSES, Osaka Univ., 2.CSRN, Osaka Univ.)

Sessions

Symposium » Is Ge substituting for Si?