Symposium (Oral)

[20p-N304-1~10] Latest trend on atomic layer processes

Fri. Sep 20, 2019 1:30 PM - 5:45 PM N304 (N304)

Makoto Sekine(Nagoya Univ.), Takeshi Momose(Univ. of Tokyo), Kazuhiro Karahashi(Osaka univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[20p-N304-1] Challenges for ALD process development and expectations for data science

〇Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

2:00 PM - 2:30 PM

[20p-N304-2] How the materials informatics can be applied to ALD and ALE

〇Toyohiro Chikyo¹, Hiori Kino¹ (1.NIMS)

2:30 PM - 3:00 PM

[20p-N304-3] The next generation way of the process control of the atomic layer deposition

〇Tadashi Mitsunari^1,2, Toshiki Sato¹, Yusuke Suzuki¹, Michitaka Kikuchi¹, Munehito Kagaya¹, Yoshinori Morisada¹, Hitoshi Yonemichi³, Hironori Moki³, Tsuyoshi Moriya¹ (1.Tokyo Electron Technology Solutions Ltd., 2.Center for Low-temperature plasma Sciences, 3.Tokyo Electron Ltd.)

3:00 PM - 3:30 PM

[20p-N304-4] RT atomic layer deposition and its application to gas barrier

Kensaku Kanomata², Masanori Miura², 〇Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL, Yamagata Univ.)

3:45 PM - 4:15 PM

[20p-N304-5] Surface Reaction Analyses for Atomic Scale Processing by Beam Experiments

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.osaka univ.)

4:15 PM - 4:30 PM

[20p-N304-6] Atomic Layer Etching of Ni by Ar-GCIB irradiation on acac adsorbed surface

〇(M1)Kota Uematsu¹, Noriaki Toyoda¹ (1.Univ. of Hyogo)

4:30 PM - 4:45 PM

△ [20p-N304-7] Dependence of chlorine adsorption layer on ion energy on Ar ion-irradiated GaN surface

〇Masaki Hasegawa¹, Takayoshi Tsutsumi², Hiroki Kondo², Makoto Sekine², Kenji Ishikawa², Masaru Hori² (1.Nagoya Univ., 2.Center for Low-temperature Plasma Sciences, Nagoya Univ.)

4:45 PM - 5:15 PM

[20p-N304-8] Study on High Selective Conformal ALE by Surface Reaction Control

〇Masaru Izawa¹ (1.Hitachi High-Tech)

5:15 PM - 5:30 PM

△ [20p-N304-9] In-situ etching reaction analysis of silicon nitride in ALE by fluorine radicals

〇Kazuya Nakane¹, Rene H. J. Vervuurt^2,3, Takayoshi Tsutsumi³, Nobuyoshi Kobayashi³, Masaru Hori³ (1.Nagoya Univ. Eng., 2.ASM Japan K.K., 3.Center for Low-temperature Plasma Sciences, Nagoya univ.)

5:30 PM - 5:45 PM

△ [20p-N304-10] Analysis of SiN Surface Fluctuations in Atomic Layer Etching

〇Akiko Hirata¹, Masanaga Fukasawa¹, Katsuhisa Kugimiya¹, Kohjiro Nagaoka¹, Kazuhiro Karahashi², Satoshi Hamaguchi² (1.Sony Semiconductor Solutions Corp., 2.Osaka Univ.)

Sessions

Symposium (technical) » Latest trend on atomic layer processes