Oral presentation

[10p-N304-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 10, 2021 1:30 PM - 4:15 PM N304 (Oral)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-N304-1] Effect of Pinholes at Side Walls on Water Flow of Batch-Type Silicon Wafer Wet Cleaning Bath

Takahashi Toshihiko¹, 〇Toko Tsuchida¹, Habuka Hitoshi¹, Goto Akihiro² (1.Yokohama National Univ., 2.Pre-Tech)

1:45 PM - 2:00 PM

[10p-N304-2] Etching behavior of zirconium oxide in acid solutions

〇Yuhei Nemoto¹, Masaaki Hirakawa², Yukako Ikegami² (1.Shibaura Mechatronics Corp., 2.Corporate Manufacturing Engineering Center, Toshiba Corporation)

2:00 PM - 2:15 PM

△ [10p-N304-3] Hydrophobicity of Nanopillar Array Structures Fabricated by Bio-template Ultimate Fabrication Processes

〇(M2)Sou Takeuchi¹, Daisuke Ohori¹, Teruhisa Ishida², Mami Tanaka², Kazuhiko Endo³, Seiji Samukawa^1,4 (1.IFS, Tohoku Univ., 2.NAGASE & CO., LTD., 3.AIST, 4.AIMR, Tohoku Univ.)

2:15 PM - 2:30 PM

[10p-N304-4] Development of Measuring Electrical Characteristics of MOS Structures with GeO₂ Films Adsorbing H₂O Molecules

〇Kenta Arima¹, Yohei Wada¹, Shuto Sano¹, Kentaro Kawai¹, Kazuya Yamamura¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

△ [10p-N304-5] Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Prove Technique

〇(D)Yuki Imai¹, Katsunori Makihara¹, Noriyuki Taoka¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

3:00 PM - 3:15 PM

[10p-N304-6] Simulation of ion-strike position dependence of heavy ion-induced noise pulses with two photon absorption pulsed-laser

〇Takumi Deguchi^1,2, Daisuke Kobayashi², Kazuyuki Hirose^1,2 (1.Tokyo Univ., 2.JAXA)

3:15 PM - 3:30 PM

△ [10p-N304-7] Effects of Potential Fluctuation on Difference between Hall Mobility and Drift Mobility

〇Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

[10p-N304-8] Atomistic Modeling of Energy Distribution of Disordered Quantum Dots

〇(M2)Jinhyong Lim¹, Nobuya Mori¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

[10p-N304-9] Calculation of Thermal Conductivity of Ge₂Sb₂Te₅ by Molecular Dynamics

〇Junya Takizawa¹, Motohiro Tomita¹, Yuji Yamanaka¹, Takanobu Watanabe¹ (1.Waseda Univ.)

4:00 PM - 4:15 PM

[10p-N304-10] Effects of heat bath size on thermal transport characterization of strained silicon nanowires

〇Junichi Hattori¹ (1.AIST)

Poster presentation

[23a-P03-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 23, 2021 9:00 AM - 10:40 AM P03 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 10:40 AM

[23a-P03-1] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computer algorithm

〇Shingo Matsuo¹, Takuya Ishibashi¹, Satofumi Souma¹ (1.Kobe Univ.)

9:00 AM - 10:40 AM

[23a-P03-2] Electrical conduction characteristics and circuit simulation of tunnel field effect transistors using
two-dimensional materials as channel materials

〇Kosuke Yamaguchi¹, Satofumi Souma¹ (1.Kobe Univ.)

9:00 AM - 10:40 AM

[23a-P03-3] Abnormal Piezoresistance Coefficient of p-Type Germanium

〇Kazunori Matsuda¹, Shiro Nagaoka², Masashi Yamamoto², Kazuo Tsutsui³, Hiroshi Kajiyama¹ (1.Tokushima Bunri Univ., 2.NIT Kagawa, 3.Tokyo Inst. Tech.)

9:00 AM - 10:40 AM

[23a-P03-4] Chemical etching of silicon assisted by patterned graphene oxide in the vapor phase

〇Wataru Kubota¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-N304-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-N304-1] Effect of Pinholes at Side Walls on Water Flow of Batch-Type Silicon Wafer Wet Cleaning Bath

[10p-N304-2] Etching behavior of zirconium oxide in acid solutions

△ [10p-N304-3] Hydrophobicity of Nanopillar Array Structures Fabricated by Bio-template Ultimate Fabrication Processes

[10p-N304-4] Development of Measuring Electrical Characteristics of MOS Structures with GeO₂ Films Adsorbing H₂O Molecules

△ [10p-N304-5] Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Prove Technique

[10p-N304-6] Simulation of ion-strike position dependence of heavy ion-induced noise pulses with two photon absorption pulsed-laser

△ [10p-N304-7] Effects of Potential Fluctuation on Difference between Hall Mobility and Drift Mobility

[10p-N304-8] Atomistic Modeling of Energy Distribution of Disordered Quantum Dots

[10p-N304-9] Calculation of Thermal Conductivity of Ge₂Sb₂Te₅ by Molecular Dynamics

[10p-N304-10] Effects of heat bath size on thermal transport characterization of strained silicon nanowires

[23a-P03-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[23a-P03-1] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computer algorithm

[23a-P03-2] Electrical conduction characteristics and circuit simulation of tunnel field effect transistors using
two-dimensional materials as channel materials

[23a-P03-3] Abnormal Piezoresistance Coefficient of p-Type Germanium

[23a-P03-4] Chemical etching of silicon assisted by patterned graphene oxide in the vapor phase

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