Poster presentation

[23p-P12-1~11] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

Thu. Sep 23, 2021 3:00 PM - 4:40 PM P12 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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3:00 PM - 4:40 PM

[23p-P12-1] Fabrication of α-Ir₂O₃ thin film using IrBr₃ precursor by mist CVD

〇Tomoharu Akaishi¹, Takashi Shinohe², Kentaro Kaneko¹ (1.Kyoto Univ., 2.FLOSFIA INC.)

3:00 PM - 4:40 PM

[23p-P12-2] Effects of substrate surface polarity on surface morphology of (ZnO)_x(InN)_1-x films fabricated by magnetron sputtering

〇(M2)Ryota Narishige¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Takamasa Okumura¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

3:00 PM - 4:40 PM

[23p-P12-3] Growth of single-crystalline Zn_1-xMg_xO films on sapphire substrate using ZnON buffer layers

〇(M2)Daichi Takahashi¹, Daisuke Yamashita¹, Takamasa Okumura¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

3:00 PM - 4:40 PM

[23p-P12-4] Fabrication of ZnO nanoparticle dispersed ZnMgO thin films by mist CVD

〇Toshihiro Nara¹, Shougo Onoda¹, Tsukasa Yagasaki¹, Kyousuke Tanaka¹, Tetsuya Kouno¹, Hiroko Kominami¹, Kazuhiko Hara¹ (1.Shizuoka Univ.)

3:00 PM - 4:40 PM

[23p-P12-5] Growth of single-crystalline ZnO layer by sputter epitaxy method

〇(M1)Hyuga Kimura¹, Ryota Misawa¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

3:00 PM - 4:40 PM

[23p-P12-6] TEM study of defects in of α-Ga₂O₃ grown on off-cut sapphire

〇Syuhei Yamashita¹, Hiroiki Hayakawa¹, Junjiro Kikawa¹, Shingo Yagyu², Takashi Shinohe², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA Inc.)

3:00 PM - 4:40 PM

[23p-P12-7] O₂annealing effect of the single crystal (InGaO₃)(ZnO)_n(n=1,3)

〇Yusuke Kawamura¹, Naoki Kase¹, Nobuaki Miyakawa¹ (1.TUS)

3:00 PM - 4:40 PM

[23p-P12-8] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (7)

〇(M1)Habata Masaya¹, Jyunnosuke Sano¹, Yohei Sato¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ, of Yamanashi)

3:00 PM - 4:40 PM

[23p-P12-9] Sputter deposition of high-mobility amorphous In₂O₃:Sn films above 350°C using nitrogen

〇Yuta Mido¹, Daisuke Yamashita¹, Takamasa Okumura¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

3:00 PM - 4:40 PM

[23p-P12-10] Influence of Thermal Annealing on UV Light Detecting Properties of ZnO Nanorods Grown by Chemical Bath Deposition

〇Kohei Kobayashi¹, Muhammad Asyraf Bin Mohamed², Mizuki Ideuchi², Tomoaki Terasako¹, Masakazu Yagi³, Yutaka Furubayashi⁴, Tetsuya Yamamoto⁴ (1.Sci.&Eng.,Ehime Univ., 2.Eng.,Ehime Univ., 3.Natl.Inst.Technol.(KOSEN)Kagawa Coll., 4.Inst.,Kochi Univ.Technol.)

3:00 PM - 4:40 PM

[23p-P12-11] Fabrication of β-Ga₂O₃nanowires by direct synthesis method

〇Yuya Hino¹, Katsushi Nishino¹ (1.Tokushima Univ.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23p-P12-1~11] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23p-P12-1] Fabrication of α-Ir₂O₃ thin film using IrBr₃ precursor by mist CVD

[23p-P12-2] Effects of substrate surface polarity on surface morphology of (ZnO)_x(InN)_1-x films fabricated by magnetron sputtering

[23p-P12-3] Growth of single-crystalline Zn_1-xMg_xO films on sapphire substrate using ZnON buffer layers

[23p-P12-4] Fabrication of ZnO nanoparticle dispersed ZnMgO thin films by mist CVD

[23p-P12-5] Growth of single-crystalline ZnO layer by sputter epitaxy method

[23p-P12-6] TEM study of defects in of α-Ga₂O₃ grown on off-cut sapphire

[23p-P12-7] O₂annealing effect of the single crystal (InGaO₃)(ZnO)_n(n=1,3)

[23p-P12-8] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (7)

[23p-P12-9] Sputter deposition of high-mobility amorphous In₂O₃:Sn films above 350°C using nitrogen

[23p-P12-10] Influence of Thermal Annealing on UV Light Detecting Properties of ZnO Nanorods Grown by Chemical Bath Deposition

[23p-P12-11] Fabrication of β-Ga₂O₃nanowires by direct synthesis method

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