Poster presentation

[20a-P07-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Tue. Sep 20, 2022 9:30 AM - 11:30 AM P07 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-P07-1] Formation and Control of Nanotrenches along Atomic Step Edges on Si(111) Surfaces by Wet-chemical Preparations

〇Tetsuro Takeuchi¹, Zhida Ma¹, Ryuto Hashimoto¹, Rongyan Sun¹, Kazuya Ymamura¹, Kenta Arima¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[20a-P07-2] Development of a low computational load simulation model for tunnel field effect transistors using two-dimensional materials and its linkage with circuit simulation

〇Kosuke Yamaguchi¹, Satofumi Souma¹ (1.Kobe Univ.)

9:30 AM - 11:30 AM

[20a-P07-3] Implementation of gate-type quantum computing algorithm to solve Poisson equation for semiconductor nanowire p-n junction

〇Shingo Matsuo¹, Satofumi Souma¹ (1.Kobe Univ.)

Oral presentation

[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 21, 2022 9:00 AM - 12:30 PM C206 (C206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-C206-1] Water Flow Improved by Side Wall Pinhole Outlets of Silicon Wafer Wet Cleaning Bath

Toko Tsuchida¹, Toshinori Takahashi¹, 〇Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

9:15 AM - 9:30 AM

△ [21a-C206-2] Vapor phase chemical etching of silicon assisted by graphene oxide in combination with micro-contact printing

〇Wataru Kubota¹, Ryoya Yamaoka¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

[21a-C206-3] Effect of ion diffusion and hydration on wet etching phenomena in nanoscale region

〇Yousuke Hanawa¹, Dai Ueda¹, Akiko Harumoto¹, Ichiro Tanabe², Ken-ichi Fukui³ (1.SCREEN HD Co., Ltd., 2.Rikkyo Univ., 3.Osaka Univ.)

9:45 AM - 10:00 AM

[21a-C206-4] Sticking behavior of trace metals onto silicon wafer surface due to change in water pH

〇Masato Nakatsu¹ (1.United Semiconductor Japan Co.,Ltd.)

10:00 AM - 10:15 AM

[21a-C206-5] Fabrication and Characterization of GeO₂/Ge-based MOS Devices After Controlled Adsorption of Water Molecules

〇(M1)Shuto Sano¹, Yohei Wada¹, Kentaro Kawai¹, Rongyan Sun¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

10:15 AM - 10:30 AM

[21a-C206-6] Study on Crystallization of a-Si thin films formed on ultrathin SiO₂ by RTA Process

〇(D)Yuki Imai¹, Katsunori Makihara¹, Noriyuki Taoka¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:45 AM - 11:00 AM

[21a-C206-7] Analysis of Energy Distribution of Disordered InP Quantum Dots

〇Jinhyong Lim¹, Nobuya Mori¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

[21a-C206-8] Construction of ReaxFF Toward Atomistic Transport Calculation of Ru Interconnects

〇Takahisa Tanaka¹, Ken Uchida¹ (1.The Univ. of Tokyo)

11:15 AM - 11:30 AM

△ [21a-C206-9] Theoretical Analysis of Electron Scattering by Step-Terrace Structure on SiC Crystal Surface

〇Keisuke Utsumi¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

[21a-C206-10] Simulation of Coulomb screening of a MOS interface charge

〇Koichi Fukuda¹, Hiroshi Oka¹, Junichi Hattori¹, Hidehiro Asai¹, Shota Iizuka¹, Hiroyuki Ota¹, Takahiro Mori¹ (1.AIST)

11:45 AM - 12:00 PM

△ [21a-C206-11] Recurrent neural network model for predicting time evolution of electron density distribution in nanowire with random impurity distribution

〇Yuuki Kobayashi¹, Kazuki Harada¹, Yoshitaka Itoh¹, Tota Suko², Masakazu Muraguchi¹ (1.Hokkaido Univ. of Sci., 2.Waseda Univ.)

12:00 PM - 12:15 PM

△ [21a-C206-12] NEGF analysis of transport properties of tail states induced by phonon scattering

〇Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

12:15 PM - 12:30 PM

[21a-C206-13] Temperature dependence of complementary field-effect transistors with Si and Ge nanosheets

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Wen Hsin Chang¹ (1.AIST)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20a-P07-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20a-P07-1] Formation and Control of Nanotrenches along Atomic Step Edges on Si(111) Surfaces by Wet-chemical Preparations

[20a-P07-2] Development of a low computational load simulation model for tunnel field effect transistors using two-dimensional materials and its linkage with circuit simulation

[20a-P07-3] Implementation of gate-type quantum computing algorithm to solve Poisson equation for semiconductor nanowire p-n junction

[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-C206-1] Water Flow Improved by Side Wall Pinhole Outlets of Silicon Wafer Wet Cleaning Bath

△ [21a-C206-2] Vapor phase chemical etching of silicon assisted by graphene oxide in combination with micro-contact printing

[21a-C206-3] Effect of ion diffusion and hydration on wet etching phenomena in nanoscale region

[21a-C206-4] Sticking behavior of trace metals onto silicon wafer surface due to change in water pH

[21a-C206-5] Fabrication and Characterization of GeO₂/Ge-based MOS Devices After Controlled Adsorption of Water Molecules

[21a-C206-6] Study on Crystallization of a-Si thin films formed on ultrathin SiO₂ by RTA Process

[21a-C206-7] Analysis of Energy Distribution of Disordered InP Quantum Dots

[21a-C206-8] Construction of ReaxFF Toward Atomistic Transport Calculation of Ru Interconnects

△ [21a-C206-9] Theoretical Analysis of Electron Scattering by Step-Terrace Structure on SiC Crystal Surface

[21a-C206-10] Simulation of Coulomb screening of a MOS interface charge

△ [21a-C206-11] Recurrent neural network model for predicting time evolution of electron density distribution in nanowire with random impurity distribution

△ [21a-C206-12] NEGF analysis of transport properties of tail states induced by phonon scattering

[21a-C206-13] Temperature dependence of complementary field-effect transistors with Si and Ge nanosheets

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