[A-4-3] Low Temperature Growth of Silicon Dioxide by Direct Photochemical Reaction of Si2H6 and O2

Y. Mishima, Y. Ashida, M. Hirose, Y. Osaka (1.Department of Electrical Engineering, Hiroshima University, 2.Corporate Development Department, Mitsui Toatsu Chemicals, Inc.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-4-4] UV Resist-Stripping for High-Speed and Damage-Free Process

Kiyoshi Ozawa, Takashi Ito, Hajime Ishikawa (1.FUJITSU LABORATORIES LTD., ATSUGI)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-4-5] RCJI Decoder for Josephson Memory

Y. Wada, M. Hidaka, I. Ishida (1.Microelectronics Research Labs., NEC Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-4-6] A 35ps Ripple Carry Josephson Adder with Latch Using High Gain Direct Coupled Logic Gates

Masami Tokumitsu, Shuichi Fujita, Masaru Okada, Kohji Hohkawa, Akira Ishida (1.Atsugi Electrical Communication Laboratory, N.T.T.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-4-7] Josephson Cell Array Circuit Using Four Junction Logic (4 JL) Gates

Hiroshi NAKAGAWA, Hideo OHIGASHI, Itaru KUROSAWA, Eiichi SOGAWA, Susumu TAKADA, Hisao HAYAKAWA (1.Electrotechnicaｌ Laboratory)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-4-8] Switching-Time Measurements on Josephson Variable Threshold Logic Gate

Norio Fujimaki, Shinya Hasuo, Toyoshi Yamaoka (1.Fujitsu Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Substrate Materials for GaAs Integrated Circuits

C. G. Kirkpatrick, R. T. Chen, D. E. Holmes, K. R. Elliott, P. M. Asbeck (1.Rockwell International Microelectronics Research and Development Center)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Deep Level Characterization in LEC GaAs

T. Ikoma, M. Taniguchi, H. Noge (1.Institute of Industrial Science, University of Tokyo)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Growth and Electrical Properties of Gallium Arsenide Single Crystal by Magnetic Field Applied LEC Technique

T. Fukuda, K. Terashima, T. Katsumata, F. Orito, T. Kikuta (1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-3-4] Influence of Growth Conditions and Alloy Composition on Deep Electron Traps of MBE Grown n-AlGaAs

K. Yamanaka, S. Naritsuka, M. Mannoh, K. Shinozaki, T. Yuasa, Y. Nomura, M. Mihara, M. Ishii (1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials |PDF Download