[B-4-6] Amorphous Si:H Linear Image Sensor Operated by a.Si:H TFT Array

F. Okumura, S. Kaneko, H. Uchida (1.Microelectronics Research Laboratories, NEC Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-4-7] High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes

H. Yamamoto, T. Baji, H. Matsumaru, Y. Tanaka, K. Seki, T. Tanaka, A. Sasano, T. Tsukada (1.Central Research Laboratory, Hitachi, Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-4-8] A CCD Image Sensor Overlaid with An a-Si:H/a-SiC:H Photoconversion Layer

Nozomu Harada, Shinji Uya, Yoshiaki Hayashimoto, Yoshiaki Komatsubara, Kyozou Ide, Okio Yoshida, Takao Kon, Kensaku Yano, Masayuki Kakegawa, Tsunekazu Yoshino (1.Toshiba Research and Development Center, 2.Electron Devices Engineering Lab. Toshiba Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-4-9] A CPD Image Sensor with P-well Antiblooming Structure

Kohji SENDA, Sumio TERAKAWA, Yoshimitsu HIROSHIMA, Yuji MATSUDA, Shigenori MATSUMOTO, Takao KUNII (1.Semiconductor Laboratory, Matsushita Electronics Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Tungsten Gate Electrode and Interconnect for MOS VLSIs

N. Yamamoto, S. Iwata, N. Kobayashi, T. Terada (1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi Microcomputer Engineering Co., Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Characteristics of Tungsten Gate MOSFETs for VLSIs

Hitoshi Kume, Eiji Takeda, Akihiro Shimizu, Yasuo Igura, Seiichi Iwata, Naoki Yamamoto, Shojiro Asai, Takaaki Hagiwara (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi Microcomputer Engineering, Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-3] A New Encroachment-Free Tungsten CVD Process with Superior Selectivity

T. Moriya, K. Yamada, Y. Tsunashima, S. Nakata, M. Kashiwagi (1.Toshiba Research and Development Center, Toshiba Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Two Step Deposition Method for Reducing Surface States of Mo Gate MOS Devices with Thin Gate Oxides

T. Amazawa, H. Oikawa (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-5] A New Application of Al-Si Films Coated with TiSi2 in VLSI Multi-Level Interconnections

Shohei Shima, Takahiko Moriya, Masahiro Kashiwagi (1.Toshiba Research and Development Center, Toshiba Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-6] A Novel Method for Selective Forming SiO2 on Mo Electrodes and the Film Properties

H. Kyuragi, H. Oikawa (1.Atsugi Electrical Communication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials |PDF Download