[A-6-7] Leakage Current Suppression in Amorphous Ta2O5 Films with Micro-Pinhole Growth Control

S. Kimura, Y. Nishioka, A. Shintani, K. Mukai (1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-6-8] Plasma-Deposited Boron Nitride as a New Class of Insulating Film

Hironobu Miyamoto, Seiichi Miyazaki, Masataka Hirose (1.Department of Electrical Engineering, Hiroshima University)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-1] MOS Device Characteristics by Perfect Planar Technology

T. Morimoto, K. Machida, S. Muramoto, T. Hosoya (1.Atsugi Electrical Communication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Depletion Trench Capacitor Cell

T. Morie, K. Minegishi, M. Kimizuka, S. Nakajima (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-3] Submicron MOSFET Characteristics with Nanometer Gate Oxide

S. Horiguchi, T. Kobayashi, K. Saito (1.Atsugi Electrical Communication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-4] The Impact of Drain Impurity Profile and Junction Depth on Submicron MOSFETs

Eiji TAKEDA, Tohhachi MAKINO, Takaaki HAGIWARA (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi Microcomputer Engineering, Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-5] A Process Variation Analysis Simulator for MOS LSI

Yukio AOKI, Toru TOYABE, Shojiro ASAI (1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-6] Double Word Line and Bit Line Structure for VLSI RAMs -Reduction of Word Line and Bit Line Delay-

Takayasu SAKURAI, Tetsuya IIZUKA (1.Semiconductor Device Engineering Laboratory, Toshiba Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-7] Electron Beam Testing Techniques for Dynamic Memory

Masayuki Sato, Shozo Saito (1.Semiconductor Device Engineering Laboratory, Toshiba Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-7-8] Data Retention and Read/Write Characteristics of SEPROM

Youichiro Niitsu, Naohiro Matsukawa, Junichi Matsunaga, Hiroshi Nozawa, Susumu Kohyama (1.Semiconductor Device Engineering Laboratory, TOSHIBA Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download