[A-2-5] Characterization of Laser Recrystallized SOI

S. Nakashima (1.Department of Applied Physics, Osaka University)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-2-6] Effects of Encapsulation Layers on Planarization of Laser Recrystallized SOI Layers

M. Ohkura, K. Kusukawa, I. Yoshida, M. Miyao, T. Tokuyama (1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[A-2-7] Rapid Annealing of a Polysilicon Stacked Emitter Structure

N. Natsuaki, M. Tamura, T. Miyazaki, Y. Yanagi (1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-1-1] GaAs-AlGaAs Superlattice Grown by MBE

H. OKAMOTO, Y. HORIKOSHI, H. IWAMURA (1.Musashino Electrical Communication Laboratory, N.T.T.)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-1-2] The Growth of an InGaAs-InP Superlattice by the Chloride VPE

J. Komeno, K. Kodama, M. Takikawa, M. Ozeki (1.Fujitsu Laboratories Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-2-1] GaAs Digital Integrated Circuits

Masamichi Ohmori (1.Atsugi Electrical Communication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-2-2] A 4x4 Bit Parallel Multiplier with GaAs JFET DCFL

Y. Kato, J. Kasahara, M. Wada, K. Taira, M. Dohsen, M. Arai, K. Gonoi, M. Sato, T. Hashimoto, N. Watanabe (1.Sony Corporation Research Center, 2.Sony Corporation Semiconductor Group)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka, Masaoki Ishikawa, Fumiaki Katano, Shuji Asai, Takashi Furutsuka, Yoichiro Takayama (1.Microelectronics Research Laboratories, NEC Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-2-4] A New GaAs MESFET with a Selectively Recessed Gate Structure

Issey OHTA, Tatsuo OTSUKI, Masaru KAZUMURA, Gota KANO (1.Semiconductor Laboratory, Matsushita Electronics Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[B-2-5] Device Model for Ion-Implanted GaAs MESFET Including Compensation Mechanism of SI Substrate

M. OGAWA, T. KAMIYA (1.Department of Electronic Engineering, University of Tokyo)

1983 Conference on Solid State Devices and Materials |PDF Download