[C-2-1] Laser Oscillations from the Internal Levels of an Impurity in a Semiconductor

P. B. Klein (1.U.S. Naval Research Laboratory)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata, Yoichi Sasai, Ichiro Nakao, Soichi Kimura, Nobuyasu Hase, Hiroyuki Serizawa (1.Central Research Laboratory Matsushita Electric Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] GaInAsP/InP Surface Emitting Laser with Two Active Layers

Y. Kotaki, S. Uchiyama, K. Iga (1.Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Lasing Characteristics and Structure of Distributed Feedback Surface Emitting Laser Diode with AlxGa1-xAs/GaAs Multilayered Heterostructure

Mutsuo OGURA, Takafumi YAO (1.Electrotechnical Laboratory)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Beam-Scannable Light Source with the Grating Output Coupler

Yasuo Kan, Ikuo Suemune, Masamichi Yamanishi (1.Faculty of Engineering, Hiroshima University)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Extremely High-Quality GaAs-AlGaAs GRIN-SCH Lasers with a Superlattice Buffer Layer Grown by MBE for OEIC Applications

T. Fujii, S. Yamakoshi, O. Wada, S. Hiyamizu (1.Fujitsu Limited)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] High-Power Operation of Index-Guided Visible GaAs/GaAlAs Multiquantum-Well Lasers

K. Uomi, S. Nakatsuka, T. Ohtoshi, Y. Ono, N. Chinone, T. Kajimura (1.Central Research Laboratory, HITACHI Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] A New Transverse-Mode Stabilized GaAlAs Laser with a Slab-Coupled Waveguide Grown by MOCVD

M. Okajima, Y. Watanabe, Y. Muto, M. Yamamoto, N. Motegi (1.Toshiba Research & Development Center, Toshiba Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] A Comparison of C3 and Novel Passive Cavity Single Frequency Lasers Operating at 1.55 Micron

R Plastow, A C Carter, P J Williams (1.Plessey Research (Caswell) Ltd Allen Clark Research Centre)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-3-5] Dependence of Threshold Current on Wavelength and Temperature in 1.3-μm GaInAsP/InP DFB Lasers

Y. Uematsu, H. Okuda, Y. Hirayama, H. Furuyama (1.Toshiba Research & Development Center, Toshiba Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download