[D-11-4] MOCVD Growth and Characterization of AlGaInP Materials by a New Pre-Cracking Technique for PH3

Yuzaburoh BAN, Mototsugu OGURA, Motoji MORISAKI, Nobuyasu HASE (1.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[D-11-5] Growth Conditions and Doping Control in GaInAsP/InP OMVPE

Sigeo Sugou, Atsushi Kameyama, Yasuyuki Miyamoto, Chiaki Watanabe, Kazuhito Furuya, Yasuharu Suematsu (1.Department of Physical Electronics, Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[D-11-6] Crystal Growth of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Triethylgallium

Yoshimitsu Kudou, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-1-1] Photoenhanced metalorganic chemical vapor deposition of ZnSe films using diethylzinc and dimethylselenide

H. Ando, M. Konagai, K. Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-1-2] ZnSe Epitaxial Layers Grown by MOCVD Using Dimethylzinc and Diethylselenide

H. Mitsuhashi, I. Mitsuishi, M. Mizuta, H. Kukimoto (1.Imaging Science and Engineering Laboratory Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-1-3] Manganese Doped ZnS Grown by Plasma-Assisted MOCVD

T. Yasuda, K. Hara, M. Mizuta, H. Kukimoto, S. Ito, K. Morimoto (1.Imaging Science and Engineering Laboratory Tokyo Institute of Technology, 2.Research and Development Laboratory Futaba Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-1-4] Production of Single Crystalline Cubic-SiC with 2-inch Diameter by CVD and Characteristics of MOS Diodes

Shigehiro Nishino, Kentaro Shibahara, Shinichi Dohmae, Hiroyuki Matsunami (1.Department of Electrical Engineering, Kyoto University)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-1-5] Structural Characterization of Very Thin Films by Fluorescence-Detected X-Ray Absorption Spectroscopy

H. Oyanagi, H. Tanoue, T. Ishiguro, T. Matsushita, K. Kohra (1.Electrotechnical Laboratory, 2.Photon Factory, National Laboratory for High Energy Physics)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-1] On the Physical Origins and New Interpretation of the EL-2 Electron Trap in GaAs

Weng-Lyang Wang, Sheng S. Li (1.Department of Electrical Engineering University of Florida)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-2] A New OEIC Fabrication Technique - Graded-Step Process - Applied to an AlGaAs/GaAs Monolithic Laser/FET

O. Wada, T. Sanada, H. Machida, S. Yamakoshi, H. Hamaguchi, T. Fujii, T. Horimatsu, T. Sakurai (1.Fujitsu Limited)

1984 International Conference on Solid State Devices and Materials |PDF Download