[A-12-1] Si-SiO2 Interface Structures of Ultrathin Oxides

Takeo Hattori, Toshihisa Suzuki (1.Department of Electrical Engineering, Musashi Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-12-2] Intrinsic Gettering Effects on Reactive Ion Etching Damage and Thin Oxide Film Breakdown

Kenji Ikuta, Shigeru Nakajima, Naohisa Inoue (1.Atsugi Electrical Communication Laboratory, NT&T)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-12-3] Improved CMOS Device Performance through Silicon Epitaxial Intrinsic Gettering Techniques

John Ogawa, Borland Rama, S. Singh (1.CVD Applications Laboratory Applied Materials, Inc., 2.Aerospace Electronics System Dept. General Electric Company)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-12-4] Defect-Free Well Layer with High-Dose B+ Implantation

Masaaki Nakai, Hideyuki Ono, Masami Ozawa (1.Central Research Laboratory, Hitachi Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-12-5] A New Planarization Technique for LSI Utilizing Si-Ge Film Oxidation

Toshio Ogino, Yoshihito Amemiya (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] Three Dimensional Thermal Analysis for Laser Annealing and Its Application to the Design of the SOI Structures

Takayuki Morishita, Toshiaki Miyajima, Jun Kudo, Masayoshi Koba, Katunobu Awane (1.Semiconductor Research Laboratories, SHARP Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Dynamic Numerical Simulation of Melting and Resolidification Process in SOI Formation by Seeded Lateral Epitaxy

M. Ohkura, M. Ichikawa, M. Miyao, H. Sunami, T. Tokuyama (1.Central Research Laboratory, Hitachi Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] Enhanced Lateral Solid Phase Epitaxial Growth in Phosphorus Doped Amorphous Si Films

Hiroshi YAMAMOTO, Hiroshi ISHIWARA, Seijiro FURUKAWA (1.Department of Applied Electronics, Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Nucleation Control and Epitaxial Alignment in Silicon-on-Insulator Structure during Solid Phase Growth

M. Miyao, M. Moniwa, M. Ichikawa, A. Ishizaka, T. Doi, H. Sunami, T. Tokuyama (1.Central Research Lab., Hitachi Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] Surface-Energy-Driven Graphoepitaxy in Ultrathin Films of Ge

T. Yonehara, Henry I. Smith, J. E. Palmer, C. V. Thompson (1.Massachusetts Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download