[B-12-4] Completely Integrated a-Si: H Linear Image Sensor with Poly Si T.F.T. Drivers

Shinji MOROZUMI, Hajime KURIHARA, Hiroyuki OHSHIMA, Tetsuyoshi TAKESHITA, Kazumasa HASEGAWA (1.R & D Department, Suwa Seikosha Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-12-5] High Transconductance Si-TFT's Using Ta2O5 Films as Gate Insulators

Shunji Seki, Takashi Unagami, Bunjiro Tsujiyama (1.Ibaraki Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] InGaAs/InP Superlattice Grown by Vapor-Phase Epitaxy and Its Applications

J. Komeno, K. Kodama, M. Ozeki (1.Fujitsu Laboratories Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-9-2] New Photoconductive Detector Based on Doping Superlattices with High-Speed Response over a Wide Energy Range

Y. Horikoshi, K. Ploog (1.Max-Planck-Institut fur Festkorperforschung)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] MOCVD Grown AlAs/GaAs Bragg Reflectors for Photodetector Application

S. Sakai, A. Shima, S. T. Wang, M. Umeno (1.Department of Engineering Science, Nagoya Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] InGaAs PIN Photodiode with Low-Dark Current

Katsuya Hasegawa, Kiyoshi Ohnaka, Minoru Kubo, Yoshikazu Hori, Hiroyuki Serizawa (1.Central Research Laboratory, Matsushita Electric and Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] A Completely Planar Type PIN-FETs Using p-Column Gate and High Purity InGaAs Layer for Long Wavelength Region

S. HATA, M. IKEDA, T. AMANO, S. KONDO, G. MOTOSUGI (1.Atsugi Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] The Relevance of Extrinsic Effects in GaInAsP Devices

A. Mozer, M. H. Pilkuhn, E. O. Gobel (1.Universitat Stuttgart, Physikalisches Institut, 2.SEL-Forschungslaboratorium, 3.Max-Planck-Institut fur Festkorperforschung)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-10-4] Long-Wavelength In0.53Ga0.47 As/InP PIN Photodiode

Li Si-hai, Zhang Yan-bin, Zhang Chong-ren, Zhang Sheng-qiong, Chen Xiao-jian (1.Nanjing Solid State Devices Research Institute)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-11-1] Band Offsets at II-VI Heterojunctions

J. O. McCaldin (1.California Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

210 results (141 - 150)

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