[LD-5-3] A New InGaAsP/InP Heterobipolar Laser Transistor

Yoshihiro Mori, Jun Shibata, Yoichi Sasai, Nobuyasu Hase, Hiroyuki Serizawa (1.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-4] ENHANCEMENT-MODE GaInAs MISFET'S WITH X-BAND OPERATION

Tomohiro ITOH, Keiichi OHATA (1.Microelectronics Research Laboratories, NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-5] CURRENT-DRIFT SUPPRESSED InP MISFETS WITH A NEW GATE INSULATOR

Osamu MIKAMI, Masamichi OKAMURA, Eiichi YAMAGUCHI, Yukihiro HIROTA, Yoshitaka FURUKAWA (1.Musashino Electrical Communication Lab., NTT)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-6] A TWO-DIMENSIONAL ELECTRON GAS IN A NEW TYPE OF HETEROSTRUCTURE, InP/n-AlInAs

M. Inoue, S. Nakajima (1.Osaka Institute of Technology, Department of Electrical Engineering, 2.Osaka University, Department of Electrical Engineering, 3.Sumitomo Electric Indus. Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-7] Planar GaAlAs/GaAs Heterojunction Bipolar Transistors

K. Morizuka, M. Obara, K. Tsuda, M. Asaka, H. Tamura, M. Mashita, J. Yoshida, A. Hojo (1.Toshiba R&D Center, 2.Electron Device Engineering Lab., Toshiba Corp.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-8] GaAs DFET Logic operated on Single Supply Voltage

Shoichi Shimizu, Yukio Kamatani (1.Toshiba Research and Development Center)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-5-9] A 2 ns GaAs 4kb SRAM Using a Dislocation Free LEC Crystal

M. IDDA, H. YAMAZAKI, N. KATO, M. OHMORI (1.Atsugi Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-6-1] 626.2 nm PULSED OPERATION (300K) OF AN MOCVD GROWN AlGaInP DOUBLE HETEROSTRUCTURE LASER

Kenichi KOBAYASHI, Isao HINO, Tohru SUZUKI (1.Opto-Electronics Research Labs., NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-6-2] Cw operation of an AlGaInP DH laser diode at 77 K grown by atmospheric MOCVD

M. Ikeda, Y. Mori, M. Honda, K. Kaneko, N. Watanabe (1.Sony corporation Research Center)

1984 International Conference on Solid State Devices and Materials |PDF Download

[LD-6-3] LOW THRESHOLD CURRENT OPERATION FOR 0.65μm InGaAsP/GaAsP VISIBLE LASER DIODE

I. Mito, M. Inai, T. Matsumoto, A. Usui, K. Kobayashi (1.Opto-Electronics Res. Labs., Fundamental Res. Labs., NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download