[B-4-3] Chemical Analysis of Ultratrace Impurities in SiO2 Films

A. Shimazaki, H. Hiratsuka, Y. Matsushita, S. Yoshii (1.Semiconductor Device Engineering Laboratory Toshiba Corporation, 2.Integrated Circuit Division Toshiba Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] Crystallographic Analysis of Thin Film Surfaces Using Micro-Probe Reflexion High-Energy Electron Diffraction

Masakazu Ichikawa, Takahisa Doi, Kazunobu Hayakawa (1.Central Research Laboratory, Hitachi Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Characterization of Semiconductor Surfaces and Interfaces by High Energy Ion Scattering

Tadashi NARUSAWA, Keisuke L. I. KOBAYASHI, Hisao NAKASHIMA (1.Optoelectronics Joint Research Laboratory)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Nondestructive In-Depth Profiling of Electronic Structures of Semiconductor Surfaces and Interfaces

Kazuki Yoshimura, Atsushi Koma (1.Institute of Materials Science, University of Tsukuba)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Nondestructive Measurements of Si-SiO2 Interface Structures Studied by Using X-Ray Excited Si KLL Auger Electron Spectra

Toshihisa Suzuki, Masaaki Muto, Motohiro Hara, Takeo Hattori, Kikuo Yamabe, Hiroshi Yamauchi (1.Department of Electrical Engineering, Musashi Institute of Technology, 2.Fujitsu Laboratories, Ltd., 3.VLSI Research Center, Toshiba Corporation, 4.Shimadzu Seisakusho Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Gettering of Copper in Ion-Beam Damaged Regions in GaP and GaAs

W. Frentrup, M. Griepentrog, H. Klose, U. Muller-Jahreis (1.Sektion Physik, Humboldt-Universitat zu Berlin)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Silicon Permeable Base Transistors

D. D. Rathman, B. A. Vojak, D. C. Flanders, N. P. Economou (1.Lincoln Laboratory, Massachusetts Institute of Technology)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Hig Voltage Bipolar-Mode MOSFET with High Current Capability

Akio NAKAGAWA, Hiromichi OHASHI, Tsuneo TSUKAKOSHI (1.Toshiba Research and Development Center)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] A New Vertical Sidewall Channel Power MOSFET with Rectangular Grooves

Daisuke Ueda, Hiromitsu Takagi, Akio Shimano, Gota Kano (1.Semiconductor Laboratory Matsushita Electronics Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] A High Performance, High Voltage Lateral pnp Transistor

Yoshitaka Sugawara, Tatsuya Kamei (1.Hitachi Research Laboratory and Takasaki Works, Hitachi, Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download