[C-5-1] HEMT LSI Circuits

M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi, M. Kobayashi (1.Fujitsu Laboratories Ltd., Fujitsu Limited)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Heterojunction GaAs MIS-Like FET

K. Matsumoto, M. Ogura, T. Wada, T. Yao, N. Hashizume, Y. Hayashi (1.Electrotechnical Laboratory)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] Al2O3/Native Oxide Double-Layer MIS Structure for InP MISFET IC's

Takayuki Sawada, Hideki Hasegawa, Hideo Ohno, Shin Itagaki (1.Department of Electrical Engineering, Hokkaido University)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] Transport Properties of n-Channel Inversion Layers on InP and InAs MISFET's

Eiichi Yamaguchi (1.Musashino Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] GaAs MESFET's with a Highly Doped Channel

K. Heime, H. Dambkes, W. Brockerhoff (1.Solid State Electronic Department, Duisburg University)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] Thermally Stable Schottky Contact to n-GaAs Using W-Al Alloy and Al/W Two Layer Metal

Hazime Matsuura, Hiroshi Nakamura, Toshimasa Ishida, Katsuzo Kaminishi (1.Research Laboratory, OKI Electric Industry Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Refractory WN Gate Self-Aligned GaAs MESFET Technology and Its Application to Gate Array IC's

Naotaka Uchitomi, Yoshiaki Kitaura, Takamaro Mizoguchi, Yasuo Ikawa Nobuyuki Toyoda, Akimichi Hojo (1.VLSI Research Center Toshiba Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] A Large Logic Swing and High Speed DCFL with GaAs MASFET's

Masamitsu Suzuki, Katsumi Murase, Masahiro Hirayama (1.Atsugi Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Experimental and Theoretical Studies on Short Channel Effects in Lamp-Annealed WSix-Gate Self-Aligned GaAs MESFET's

T. Ohnishi, Y. Yamaguchi, T. Onodera, N. Yokoyama, H. Nishi (1.Fujitsu Laboratories Ltd., Atsugi)

1984 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] The Effect of Substrate Purity on Short-Channel Effects of GaAs MESFET's

Hiroshi Nakamura, Masanori Tsunotani, Yoshiaki Sano, Toshio Nonaka, Toshimasa Ishida, Katsuzo Kaminishi (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

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