[S-E-28] The Improved Device Characteristics of MIM-LCD

H. Aruga, T. Kamikawa, K. Suzuki, N. Ono, T. Ushiki, K. Koide, H. Kinoshita, M. Murai (1.SEIKO EPSON Corp., Suwa South Plant)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-E-29] High Performance a-Si:H TFT Driven Linear Image Sensor with New Multiplex Structure for G4 Facsimile

Hiroyuki MIYAKE, Mamoru NOBUE, Kazuhiro SAKAI, Tsutomu ABE, Yoshihiko SAKAI, Hiroyuki HOTTA, Yasumoto SHIMIZU, Kimio KOIZUMI, Hisao ITO, Takashi OZAWA (1.Electronic and Imaging Devices Research Laboratory, 2.No.2 Electronic Device Department, Fuji Xerox Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-E-30] A Redundant Poly-Si TFT Shift Register Using Laser Repair Technique

H. Asada, K. Sera, F. Okumura, S. Kaneko (1.Functional Devices Research Laboratories, NEC Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-E-31] High Conducting Large Area ITO Electrodes for Displays Prepared by DC Magnetron Sputtering

R. Latz, K. Michael, M. Scherer (1.Leybold AG)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-F-1] Native Oxide Growth on Silicon Surface in Wet Ambient

Mizuho MORITA, Tadahiro OHMI, Eiji HASEGAWA, Akinobu Teramoto (1.Department of Electronics, Faculty of Engineering, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-F-2] The Role of Hydrogen, Oxygen and Water in Oxidation of Hydrogen Terminated Silicon Surface

N. Yabumoto, K. Saito, M. Morita, T. Ohmi (1.NTT LSI Laboratories, 2.Faculty of Engineering, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-F-3] The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces

T. Sunada, T. Yasaka, M. Takakura, T. Sugiyama, S. Miyazaki, M. Hirose (1.Department of Electrical Engineering, Hiroshima University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-F-4] Silicon-Hydrogen Bonds in Native Oxides Formed during Wet Chemical Treatments

Kazuhisa SUGIYAMA, Takayuki IGARASHI, Kazunori MORIKI, Yoshikatsu NAGASAWA, Takayuki AOYAMA, Rinshi SUGINO, Takashi ITO, Takeo HATTORI (1.Musashi Institute of Technology, 2.Toray Research Center Inc., 3.Fujitsu Laboratories Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-F-5] Surface Composition Analysis of HF Vapor Cleaned Silicon by X Ray Photoelectron Spectroscopy

Anne ERMOLIEFF, F. MARTIN, A. AMOUROUX, S. MARTHON, J. F. M WESTENDORP (1.CEA/DTA, Division LETI/D.OPT, 2.ASM Microelectronics technology centre)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-F-6] Silicon Oxidation Kinetics in the Thin-Film Regime

Hisham Z. Massoud (1.Department of Electrical Engineering, Duke University)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (261 - 270)

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