[C-2-2] Modification of the SiO2-Si System by Treatment in Atomic Hydrogen and Very Light Nitridation

I. A. Aizenberg (1.Academy of Sciences, U.S.S.R.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] MOS Characteristics and Reliability of Thin Gate Dielectrics Grown by Rapid Thermal Processing in O2 Diluted with NF3

G. Q. Lo, W. Ting, D. L. Kwong, J. Kuehne, C. W. Magee (1.Microelectronics Research Center, The University of Texas at Austin, 2.Texas Instrument Inc., 3.Evans East Inc.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Optimization of Nitridation and Re-oxidation Conditions for an EEPROM Tunneling Dielectric

N. Ajika, M. Ohi, O. Sakamoto, H. Arima, T. Matsukawa, N. Tsubouchi (1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Thin Nitrided SiO2 Films for EEPROMs

M. DUTOIT, E. GOIN, N. NOVKOVSKI, I. AIZENBERG, J. MANTHEY, J. SOLO DE ZALDIVAR (1.Swiss Federal Institute of Technology, 2.Faselec)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-6] A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

Hirotaka MUTO, Haruhisa FUJII, Koichiro NAKANISHI, Shingo IKEDA (1.Manufacturing Development Lab., 2.Mitsubishi Electric Corp.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-7] Low Temperature Deposition of High Quality Silicon Oxide Films

Hideo IZAWA, Yutaka NISHI, Masaya OKAMOTO, Hiroshi MORIMOTO, Mitsuo ISHII (1.Giant Electronics Technology Co., 2.Liquid Crystal Laboratories and Liquid Crystal Display Group, Sharp Co.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-8] A Model for SiNx CVD Film Growth Mechanism by Using SiH4 and NH3 Source Gases

Akihiko Ishitani, Shiro Koseki (1.VLSI Development Division, NEC Corporation, 2.NEC Scientific Information System Development, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-9] High Reliability Poly-Oxide Grown on in-situ Phosphorus Doped Amorphous Si

Takashi KOBAYASHI, Shinpei IIJIMA, Atsushi HIRAIWA (1.Central Research Laboratory, Hitachi Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-2-10] Tantalum Oxide Films Formed by UV Photo-CVD Using Oxygen and Ozone and Its Photo-Chemical Leakage Current Reduction Mechanism

Satoshi TANIMOTO, Masahiro MATSUI, Minoru AOYAGI, Koichi KAMISAKO, Koichi KUROIWA, Yasuo TARUI (1.Department of Electronic Engineering, Tokyo University of Agriculture and Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] n+-Polysilicon Etching with Both High Anisotropy and High Selectivity by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma

Takashi MATSUURA, Hiroaki UETAKE, Junichi MUROTA, Koichi FUKUDA, Tadahiro OHMI, Nobuo MIKOSHIBA (1.Department of Electronics, Faculty of Engineering, Tohoku University, 2.Research Institute of Electrical Communication, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF Download

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