[C-7-1] Structural, Chemical and Electrical Properties of Si wafers for ULSI Applications

P. O. Hahn (1.Wacker-Chemitronic GmbH, Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] Nucleation Control of Silicon-Germanium on Silicon Oxide for Selective Epitaxy and Polysilicon Formation in Ultraclean Low-Pressure CVD

Manabu KATO, Chisato IWASAKI, Junichi MUROTA, Nobuo MIKOSHIBA, Shoichi ONO (1.Research Institute of Electrical Communication)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Formation of High Quality Si1-xGex/Si Crystals Heterostructure Limited Area MBE Growth

A. Nishida, K. Nakagawa, E. Murakami, M. Miyao (1.Central Research Lab., Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4] Silicon Heterostructure by Germanium Ion Implantation

Akira Fukami, Ken-ichi Shoji, Takahiro Nagano (1.Hitachi Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-7-5] In-situ Multiprocessing ULSI Manufacturing Technology by RTP-CVD

T. Y. Hsieh, K. H. Jung, W. Ting, D. L. Kwong (1.Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-7-6] Diborane Addition Effect on Second Order Reactions of Si Photo-CVD under Vacuum Ultraviolet Irradiation

Satoru Watanabe, Takashi lto (1.Fujitsu Laboratories Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-7-7] Sharp Boron Spikes in Silicon Grown at Reduced Pressures by Fast-Gas-Switching-CVD

A. T. Vink, P. J. Roksnoer, J. W. F. M. Maes, C. J. Vriezema, P. C. Zalm (1.Philips Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Low Temperature Microelectronics

Fritz H. Gaensslen, Richard C. Jaeger (1.IBM T. J. Watson Research Center, 2.Electrical Engineering Department)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] The Impact of Avalanche Generation on Punchthrough in Thin-Film SOI MOSFETs

K. Nakamura, R. Izawa, E. Takeda (1.Central Research Laboratory, Hitachi, Ltd., 2.Semiconductor Design & Development Center, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-8-3] Ultra Thin Nitride Gate MISFET Operating with Tunneling Gate Current

T. Morimoto, H. S. Momose, S. Takagi, K. Yamabe, H. Iwai (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (81 - 90)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Next »

▲