[S-CI-10] High Overlay Tolerance for Half-Micron Photolithography Using Heterodyne Holographic Wafer Alignment

K. Yamashita, N. Nomura (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CI-11] Cluster Tools for Fabrication of Advanced Devices

Dan Maydan (1.Applied Materials, Inc.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CI-12] Silicon Wafer-Bonding Process Technology for SOI Structures

T. Abe, M. Nakano, T. Itho, T. Takei, A. Uchiyama, K. Yoshizawa, Y. Nakazato (1.Shin-Etsu Handotai, 2.Nagano Denshi)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CII-1] Interface Reaction Control for Future ULSI Metallization Process

H. Okano, H. Itoh, T. Watanabe, N. Hayasaka, K. Horioka (1.ULSI Research Center, Toshiba Corp., 2.MOS Process Engineering Sec. II Integrated Circuit Advanced Process Engineering Department, Toshiba Corp.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CII-2] In-situ Measurements on Films on Silicon

Eugene A. Irene (1.Department of Chemistry, University of North Carolina)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CII-3] In-situ Infrared Spectroscopy of Selective CVD of Tungsten Using WF6 and SiH4

Nobuyoshi Kobayashi, Hidekazu Goto, Masayuki Suzuki (1.Central Research Laboratory, Hitachi, Ltd., 2.Semiconductor Design & Development Center, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CII-4] Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode

Yoshio Hayashide, Hiroshi Miyatake, Junichi Mitsuhashi, Makoto Hirayama, Takashi Higaki, Haruhiko Abe (1.LSI R&D Lab. Mitsubishi Electric Corp.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-CII-5] A New Stacked Capacitor Structure Using Hemispherical-Grain(HSG) Poly-Silicon Electrodes

H. Watanabe, N. Aoto, S. Adachi, T. Ishijima, E. Ikawa, K. Terada (1.Microelectronics Research Laboratories, NEC Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-1] Control of GaAs on Si Interface Using Atomic Layer Epitaxy

Kuninori KITAHARA, Nobuyuki OHTSUKA, Osamu UEDA, Masashi OZEKI (1.Fujitsu Laboratories Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-2] Optical Investigation of GaAs Growth Process in Flow-Rate Modulation Epitaxy

Naoki Kobayashi, Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi (1.NTT Basic Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (211 - 220)

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