[C-8-4] A Band-to-Band Tunneling MOSFET Using a Thin Film Transistor

H. S. Momose, S. Kambayashi, H. Kawaguchi, I. Mizushima, S. Onga, J. Matsunaga (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-8-5] Novel Transport Characteristics of One-Dimensional Quantum Subbands in Si-MOSFET's

Hideyuki MATSUOKA, Toshiyuki YOSHIMURA, Tsuneo ICHIGUCHI, Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd., 2.Advanced Research Laboratory, Hitachi Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-8-6] High Hole Mobility and High Sheet Hole Concentration in p-Si/SiGe Modulation Doped Heterostructures Grown by MBE

T. MISHIMA, C. W. FREDRIKSZ, G. F. A. VAN DE WALLE, D. J. GRAVESTEIJN, R. A. VAN DEN HEUVEL, A. A VAN GORKUM (1.Philips Research Laboratories, 2.Exchange researcher from Hitachi CRL)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-8-7] Organic Quantum Computing Systems for Eletronic Brain

Kikukazu Sakurai, Shigemasa Takano (1.NEC Corporation, Functional Devices Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] A Methodology for Control of Nucleation and Grain Growth in Amorphous Silicon Films and Its Application to Process Optimization for TFTs

I. Mizushima, S. Kambayashi, T. Yoshida, M. Kinugawa, K. Ohori, H. Kuwano, S. Onga, J. Matsunaga (1.ULSI Research Center, Semiconductor Device Engineering Laboratory, Toshiba Corporation, 2.Keio University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-9-2] High Mobility Poly-Si Thin Film Transistor Fabricated in Avalanche-Nucleated Amorphous Si

M. Ohkura, M. Moniwa, K. Kusukawa, M. Miyao (1.Central Research Laboratory, Hitachi Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] Leakage Currents Reduction of Poly-Si TFT's by Two Step Annealing

T. Aoyama, Y. Mochizuki, G. Kawachi, S. Oikawa, K. Miyata (1.Hitachi Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-9-4] Thin Film Effects of Double-Gate Polysilicon MOSFET

T. Hashimoto, T. Mine, T. Yamanaka, N. Hashimoto, A. Shimizu, T. Nishida, Y. Kawamoto (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-9-5] A High Density High Performance Cell for 4M Bit Full Feature EEPROM

N. Ajika, M. Ohi, H. Arima, T. Matsukawa, N. Tsubouchi (1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-9-6] Limitations of Trench Cell Process Technologies for Submicron DRAMs

S. Auer, J. Dietl, L. DoThanh, B. Ganter, K. H. Kusters, P. Kupper, L. Kusztelan, H. M. Muhlhoff, W. Muller, F. X. Stelz (1.Siemens AG)

1990 International Conference on Solid State Devices and Materials |PDF Download

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