[PB5-2] Diffusion Problems between Y-Ba-Cu-O Thin Films and MgO Substrates

Y. Igarashi, Y. Fujino, T. Mandai, A. Nannichi, N. Takimoto (1.Department of Engineering Science, Tohoku University, 2.Department of Nuclear Engineering, Tohoku University, 3.Department of Electronic Engineering, Tohoku Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB5-3] Superconductivity in BiSrCaCuO Superlattices

Masao NAKAO, Hiroaki FURUKAWA, Ryohkan YUASA, Shuji FUJIWARA (1.SANYO Tsukuba Research Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB5-4] Synthesis of Superconducting Thin Film by Molecular Beam Epitaxy

M. Ogihara, N. Toda, T. Yamada, H. Abe (1.Research and Development Group, Oki Electric Industry Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB5-5] Scaling and Physical Limitations of Quantum Flux Parametron (QFP) Devices

Yasuo WADA, Mutsumi HOSOYA, Ryotaro KAMIKAWAI, Willy HIOE, Eiichi GOTO (1.ERATO, Research Development Corporation of Japan (JRDC))

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB5-6] Characteristics of All-Nb Thin Film Microbridges by Nanometer Fabrication

Y. Harada, N. Hirose, Y. Uzawa, M. Sekine (1.Department of Applied Electronics, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB6-1] Fluoride Buffer Layer Relaxing the Stress of GaAs on Si and Its Effects

Masahiro UCHIGOSHI, Kazuo TSUTSUI, Seijiro FURUKAWA (1.Dept. of Applied Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB6-2] Structural and Electrical Improvement of GaAs on Si by Multi-Step Rapid Thermal Annealing Treatment

Mingxiang Li, Qinyi Tong, Qinde Zhuang Gong Zou, J. Deboeck, M. Van Rossum, G. J. Declerck (1.Microelectronics Center, Southeast Univ., 2.IMEC)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB6-3] Gas-Source MBE Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source

N. Okamoto, H. Ando, A. Sandhu, T. Fujii (1.Fujitsu Laboratories Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB6-4] MBE Growth of AlGaAs on (100)- and (111)-Oriented Substrates Using As2

M. Morishima, H. Horie, M. Nagai, K. Matsumoto, T. Hayakawa (1.Research & Developement Center, Eastman Kodak (Japan) Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB6-5] Heavily Doping of GaAs with Be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector

Ping-Der Liu, Tung-Ho Shieh, Meng-Yueh Wu, T'ien-Chih Chang, Si-Chen Lee, Hoa-Hsiung Lin (1.Department of Electrical Engineering National Taiwan University)

1991 International Conference on Solid State Devices and Materials |PDF Download

262 results (171 - 180)

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