[A-8-4] An Advanced Fabrication Technology of Hemispherical Grained (HSG) Poly-Si for High Capacitance Storage Electrodes

H. Watanabe, T. Tatsumi, T. Niino, A. Sakai, S. Adachi, N. Aoto, K. Koyama, T. Kikkawa (1.Microelectronics Research Labs., NEC Corp., 2.Fundamental Research Labs., NEC Corp., 3.VLSI Development Division, NEC Corp.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-1] Ultra-Clean Low Temperature Si Processes under the Assistance of Energy Controlled Ion Bombardment

T. Ohmi (1.Department of Electronics, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-2] HF and UV-Ozone Integrated Wafer Preclean: Chemistry and Effects on Thermal Gate Oxide

M. Liehr, S. R. Kasi (1.IBM T.J. Watson Research Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-3] Chemical Stability of HF-Treated Si(111) Surfaces

T. Yasaka, K. Kanda, K. Sawara, S. Miyazaki, M. Hirose (1.Department of Electrical Engineering, Hiroshima University, 2.Research Center for Integrated Systems, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-4] Fluorine Segregation at SiO2/Si Interface

Yukinori ONO, Michiharu TABE, Yutaka SAKAKIBARA (1.NTT LSI Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-5] Mechanisms Responsible for the Chemical Removal of Fe and Cu from Si Surfaces

M. L. Kniffin, C. R. Helms (1.Department of Electrical Engineering Stanford University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-6] New Techniques in Vapor Phase Wafer Cleaning

B. E. DEAL, M. A. McNEILLY, D. B. KAO (1.ADVANTAGE Production Technology, Inc.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-7] Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by HF Treatments

Yukinori MORITA, Kazushi MIKI, Hiroshi TOKUMOTO (1.Electrotechnical Laboratory)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-B-8] Silicon-Monohydride Termination of Silicon-(111) Surface Formed by Boiling Water

Satoru Watanabe, Mayumi Shigeno, Noriaki Nakayama, Takashi Ito (1.Fujitsu Laboratories Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB5-1] Preparation of YbBa2Cu3O7-x Films on Si(100) Substrates Using SrTiO3 Buffer Layers

Naoki Tsuji, Hiroshi Nohira, Hiroyuki Mori, Hiroshi Ishiwara (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology, 2.Faculty of Engineering, Musashi Institute of Technology, 3.Central Research Laboratory, Hitachi Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

262 results (161 - 170)

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