[D-6-1] Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth

Y. Nagamune, S. Tsukamoto, M. Nishioka, Y. Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo, 2.Institute of Industrial Science, University of Tokyo)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Low Temperature Surface Preparation of Vicinal Si(100) for Epitaxial Growth of GaAs on Si

Yoshitaka OKADA, Haruhiko AJISAWA, Akira MOKI, Takeyoshi SUGAYA, Mitsuo KAWABE (1.Institute of Materials Science, University of Tsukuba)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-6-3] Electrical Properties of ZnSe-Based II-VI Semiconductors/(NH4)2Sx-Pretreated GaAs Heterointerfaces

Takahiro Ohnakado, Yi-hong Wu, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita (1.Department of Electrical Engineering, Kyoto University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Selective Growth of GaAs by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation

Takeyoshi SUGAYA, Hirofumi SHIMOMURA, Yoshitaka OKADA, Mitsuo KAWABE (1.Institute of Materials Science, University of Tsukuba)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-6-5] Lateral MOMBE of GaAs on a Patterned (111)B Substrate

Y. Nomura, Y. Morishita, S. Goto, Y. Katayama, T. Isu (1.Optoelectronics Technology Research Laboratory, 2.Central Research Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] Blue Electroluminescence from ZnSe p-n Junction LEDs

Kazuhiro OHKAWA, Akira UENO, Tsuneo MITSUYU (1.Central Research Laboratories Matsushita Electric Ind. Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] Effects of Electric Field on Exciton Transition in Type II CdZnS/ZnS Strained-Layer Superlattices

Tsunemasa TAGUCHI, Tetsuichiro OHNO (1.Department of Electrical Engineering, Osaka University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Observation of Luminescence from a Highly Concentrated Nd Center in GaP by Direct Optical Excitation and Comparison with Nd Centers Excited under Host Excitation

Moriyuki Taniguchi, Hiroshi Nakagome, Kenichiro Takahei (1.NTT Basic Research Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] Characterization of Novel Cu-Al-Se Films Grown by MBE

Yoshio MORITA, Tadashi NARUSAWA (1.Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB2-L5] Wafer Rotation Effect on Silicon Epitaxial Growth

Yuusuke Sato, Toshimitu Ohmine (1.Mechanical Engineering Lab., Toshiba R&D Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

262 results (231 - 240)

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