[S-A-8] Giant Micro-Electronics Technology Using Gravure Printing Techniques

Keiichi NAKAO, Masaaki HAYAMA, Keizaburo KURAMASU, Mikinari SHIMADA, Masahide TSUKAMOTO (1.Corporate Products Development Center of Matsushita Electronic Components Co., Ltd., 2.Material and Devices Research Laboratory of Matsushita Electric Industrial Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-1] High Mobility and High Stability a-Si:H TFTs with Smooth MIS Interface

H. UCHIDA, K. TAKECHI, S. NISHIDA, S. KANEKO (1.Functional Devices Research Laboratories, NEC Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-2] Batch-Process for High Performance Amorphous-Silicon Thin-Film Transistors Using Hot-Wall Chemical-Vapor-Deposition Method

Byung-Chul AHN, Kazuhiro SHIMIZU, Tsutomu SATOH, Hiroshi KANOH, Osamu SUGIURA, Masakiyo MATSUMURA (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.GoldStar Research Lab.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-3] The Switching Characteristics of a-Si TFT Fabricated by Ion Doping Technique

Yasuhiro Mitani, Hirohisa Tanaka, Hiroshi Morimoto, Mitsuo Ishii, Katsunobu Awane (1.Liquid Crystal Laboratories, Liquid Crystal Display Group, Sharp Co.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-4] Low Temperature Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (Cat-CVD) Method

Hideki MATSUMURA (1.Department of Physical Electronics, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-5] TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)

Mitsutoshi MIYASAKA, Takashi NAKAZAWA, Ichio YUDASAKA, Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION TFT Research Laboratory)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-6] Comparison of Different Processes in the Fabrication of Crystallized Amorphous Silicon Thin Film Transistors

N. T. Tran, M. P. Keyes, S. Shiffman, G. Liu, S. J. Fonash (1.Graphic Research Lab., 2.Center for Electronic Materials & Processing The Pennsylvania State University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-7] Crystallinity Improvement of Small Grained Poly-Si Films by Excimer Laser Annealing for High Performance TFT's

Takashi Noguchi, Hironori Tsukamoto, Toshiharu Suzuki, Haruko Masuya (1.Process Technology Div., ULSI R&D Group, Sony Corp.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-8] Enlargement of P-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance P-Si TFT

S. Noguchi, H. Kuriyama, S. Kiyama, T. Kuwahara, T. Nohda, S. Ishida, K. Sano, H. Iwata, S. Tsuda, S. Nakano (1.Giant Electronics Technology Co., Ltd., 2.SANYO Electric Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-9] High Mobility Botton-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen Radical Annealed Polysilicon Films

Kazuhiro SHIMIZU, Hideki HOSOYA, Osamu SUGIURA, Masakiyo MATSUMURA (1.Department of Physical Electronics, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF Download