[S-E-5] Integration of Optical and Electronic Devices by Impurity Induced Layer Disordering

Thomas L. Paoli, Robert L. Thornton (1.Xerox Palo Alto Research Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-E-6] Visible Semiconductor Lasers--toward Shorter Wavelength

Y. Mri, Y. Ban, Y. Takahashi, M. Mannoh, J. Hoshina, I. Kidoguchi, S. Kamiyama, H. Ohta, K. Ohnaka (1.Matsushita Electric Industrial Co., Ltd. Semiconductor Research Center Opto-Electronics Research Laboratory)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-E-7] Integrated Optoelectronic Devices Based on Organic/Inorganic Heterojunctions

S. R. FORREST, F. F. SO (1.Departments of Electrical Engineering and Materials Science National Center for Integrated Photonic Technology University of Southern California)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] MBE as a Mass Production Technology for AlGaAs Lasers

Haruo TANAKA (1.ROHM Co., LTD.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] A GaAs MESFET with Very Short Channel Length Fabricated by Selective MOCVD Technique

Chang-Tae Kim, Chang-Hee Hong, Young-Se Kwon (1.Dept. Of Elec. Eng., Korea Advanced Institute of Science and Technology)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] Enhancement of Mobility in Pseudomorphic FET's with Up and Down Monolayers

H. Goronkin, J. Shen, S. Tehrani, R. Droopad, G. N. Maracas, R. N. Legge, X. T. Zhu (1.Motorola Inc., Phoenix Corporate Research Lab, 2.Electrical Engineering Department, Arizona State University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] Migration Enhanced Epitaxy of InP Using Polycrystalline-InP as Phosphorus Source

Bing-Xiong YANG, Hideki HASEGAWA (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Metal-Organic Molecular-Beam Epitaxy with a New Arsenic Precursor As[N(CH3)2]3: Characterization of the Decomposition Processes and Growth of GaAs

Tomoaki KOUI, Ikuo SUEMUNE, Kazuhiko HAMAOKA, Kazuyuki FUJII, Akihiro KISHIMOTO, Yoshiaki HONDA, Masamichi YAMANISHI (1.Faculty of Engineering, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Effect of Si Interlayers on Heteroepitaxial Films of GaAs/Si/GaAs and GaAs/Si/GaAs/Si System

Masao TAMURA, Akihiro HASHIMOTO (1.Optoelectronics Technology Research Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] Novel Selective Growth of Buried GaAs Quantum Wire Arrays by Metal Organic Chemical Vapor Deposition

S. Tsukamoto, Y. Nagamune, M. Nishioka, Y. Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo, 2.Institute of Industrial Science, University of Tokyo)

1991 International Conference on Solid State Devices and Materials |PDF Download

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