[C-2-3] Strain Induced Carrier Confinement in a Buried Stressor Structure

Z. Xu, M. Wassermeier, Y. J. Li, P. M. Petroff (1.Materials Department and Department of ECE University of California)

1991 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Sub-Quarter Micron Gate Fabrication Process Using Phase-Shifting-Mask for Microwave GaAs Devices

Kazuyuki Inokuchi, Tadashi Saito, Hideyuki Jinbo, Yoshio Yamashita, Yoshiaki Sano (1.Research and Development Group, Oki Electric Industry Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Investigation of Breakdown Location in GaAs MESFETs by Two-Dimensional Simulation and Emission Microscopy

Jayne Ashworth, Norbert Arnold (1.SIEMENS AG, Corporate Research and Development)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Future Prospects of Opto-Electronic Devices and Processings

W. T. Tsang (1.AT&T Bell Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Extremely Low Damping K-Factor in Highly Detuned DFB Strained Layer MQW SA-CM Lasers

Masaaki ONOMURA, Yuzo HIRAYAMA, Motoyasu MORINAGA, Masahisa FUNEMIZU, Nobuo SUZUKI, Masaru NAKAMURA (1.Toshiba Research and Development Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Flip-Chip GaInAs/InP Quad PIN Photodiodes for Polarization-Diversity Coherent Optical Receivers

Hisashi HAMAGUCHI, Masao MAKIUCHI, Akito KURAMATA, Takashi MIKAWA, Osamu WADA (1.Fujitsu Laboratories Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] High-Speed Planar InP/InGaAs Avalanche Photodiodes with Optimized Electric Field Profile

Yasuhiro KITO, Haruhiko KUWATSUKA, Toru UCHIDA, Takashi MIKAWA (1.Fujitsu Laboratories Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Realization of Highly Reliable High-Power Operation of Single-Stripe AlGaAs Lasers by the Formation of Window Grown on Facets

Kazuaki SASAKI, Mitsuhiro MATSUMOTO, Masaki KONDO, Takashi ISHIZUMI, Tadashi TAKEOKA, Saburo YAMAMOTO, Toshiki HIJIKATA (1.Optical-Device Laboratories, Sharp Corporation, 2.Opto-Electronic Devices Division, Sharp Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

K. Nitta, K. Itaya, Y. Nishikawa, M. Ishikawa, M. Okajima, G. Hatakoshi (1.Research and Development Center, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] 637nm cw Operation of Low Threshold Current AlGaInP Strained Single Quantum Well Laser Diodes

T. Katsuyama, I. Yoshida, J. Shinkai, J. Hashimoto, H. Hayashi (1.Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

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