[PB6-6] Preparation of PbTiO3 Thin Films by Ion- and Photo-Assisted Evaporation

Shigenori HAYASHI、Kenji IIJIMA、Takashi HIRAO (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB6-7] Bi12SiO20 Electro-Optic Thin Films Deposited on Sapphire by ECR Plasma Sputtering

Koji NOMURA、Hisahito OGAWA (1.Matsushita Electric Industrial Company, Limited, Central Research Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB6-8] Nanometer-Scale Design and Growth of Ceramic Hetero-Junctions and Superlattices

Hirotoshi NAGATA、Mamoru YOSHIMOTO、Hideomi KOINUMA (1.Research Laboratory of Engineering Materials, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB6-9] Non Wetchemical Lift Off of Titanium Dry Etch Masks by Hydride Formation

B. Kempf、H. Burkhard (1.Deutsche Bundespost TELEKOM Forschungsinstitut beim FTZ)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB6-10] Structure and Magnetic Properties of Fe/Ag Multilayer Films Prepared by DC Sputtering

Yumiko HAGA、Yoshio NAKAMURA、Akira SUGAWARA、Osamu NITTONO (1.Department of Metallurgical Engineering, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB7-1] Estimation Method for Charge Build-Up Gate Oxide during Bias ECR Plasma Deposition

Katsuyuki MACHIDA、Manabu ITSUMI、Kazushige MINEGISHI (1.NTT LSI Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB7-2] In-situ Counting of Process-Induced Particle

Kaoru Kondo、Kazuo Ichijo、Keisuke Shinohara、Tamio Hoshina、Kazuo Tsubouchi、Kazuya Masu (1.RION CO., Ltd.、2.Research Institute of Electrical Communication, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB7-3] The Optimization of In-Situ Thermal Cleaning Focused on Surface Microroughness for Future Si Epitaxial Growth

A. Ohkura、H. Oku、K. Matsumoto、T. Ohmi (1.Department of Electronics, Faculty of Engineering Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB7-4] Direct Analysis for the Contamination in Contact and Via Holes Using Thermal Desorption Spectroscopy

Hidemitsu Aoki、Eiji Ikawa、Takamaro Kikkawa、Yuden Teraoka、Iwao Nishiyama (1.Microelectronics Research Labs, NEC Corp.、2.Opto-electronics Research Labs, NEC Corp.)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB7-5] Elimination of Metal-Sputtering Contamination in Ion Implanter for Low-Leakage-Current pn Junction Formation

Y. Kato、S. Shimonishi、T. Ohmi、T. Shibata、T. Nitta (1.Department of Electronics, Tohoku University、2.Device Development Center, Hitachi Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

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