[S-VI-4] In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex

Seiji Heike、Tomihiro Hashizume、Yasuo Wada (1.Advanced Research Laboratory, Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-5] Confinement Potential in an Asymmetrically Biased Quantum Point Contact

F. Wakaya、J. Takahara、S. Takaoka、K. Murase、K. Gamo (1.Faculty of Engineering Science, Osaka University、2.Faculty of Science, Osaka University、3.Research Center for Extreme Materials, Osaka University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-6] Formation and Characterization of AlGaAs Quantum Wires on Vicinal (110) Surfaces

H. Nakashima、M. Takeuchi、K. Kimura、M. Iwane、H. K. Huang、K. Inoue、J. Christen、M. Grundmann、D. Bimberg (1.The Institute of Scientific and Industrial Research, Osaka University、2.Fakultat fur Naturwissenschaften, Otto-von-Guericke Universitat Magdeburg、3.Institut fur Festkorperphysik, Technische Universitat Berlin)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-7] Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices

Junji YOSHIDA、Ichirou NOMURA、Akihiko KIKUCHI、Katsumi KISHINO (1.Department of Electrical & Electronics Engineering, Sophia University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-8] Photoluminescence and Cathodoluminescence Characterization of InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy

H. Fujikura、H. Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-9] Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers

Nobuaki Hatori、Toshikazu Mukaihara、Yukio Hayashi、Noriyuki Ohnoki、Fumio Koyama、Kenichi Iga (1.Tokyo Institute of Technology, Precision and Intelligence Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-10] A Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers

Seiya KASAI、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Engineering, Hokkaido University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-VI-11] Polarization Controlled Spontaneous Emission from a GaInAsP/InP Strained QW 2D Photonic Crystal

T. Baba、T. Matsuzaki (1.Yokohama National University, Div. of Electr. & Computer Eng.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Extreme-Submicron Si-Based MOSFETs:Scaling Characteristics and Engineering Tradeoffs

Dimitri A. Antoniadis (1.Microsystems Technology Laboratories Massachusetts Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Hot-Carrier Reliability of 0.1 μm Delta-Doped MOSFETs

Kenji NODA、Tetsuya UCHIDA、Toru TATSUMI、Chenming HU (1.ULSI Device Development Laboratories, NEC Corporation、2.Microelectronics Research Laboratories, NEC Corporation、3.Department of Electrical Engineering and Computer Science, University of California at Berkeley)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード