[C-2-4] Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics

M. Kawata、M. Kitakata、E. Hasegawa、A. Ishitani、K. S. Krisch、M. L. Green、D. Brasen、L. Manchanda、L. C. Feldman (1.ULSI Device Development Laboratories, NEC Corp.、2.AT&T Bell Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-5] Characteristics of Boron Diffusion from BSG Film and the Formation of Ultra-Shallow, Low-Resistance Junctions

Hiroshi KUJIRAI、Eiichi MURAKAMI、Shin'ichiro KIMURA (1.Central Research Laboratory, Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-6] Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions

Akira NAKADA、Mauricio Massazumi OKA、Yukio TAMAI、Tadashi SHIBATA、Herzl AHARONI、Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-1] Assigning Core-Level Si 2p Photoemission Shifts at the Si/SiO2 Interface

Sunghee LEE、Mark M. BANASZAK HOLL、Wei Hsiu HUNG、F. R. McFEELY (1.Department of Chemistry, Brown University、2.IBM T. J. Watson Research Center)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-2] Optical Cavity Based on Porous Silicon Superlattice Technology

Minoru Araki、Hideki Koyama、Nobuyoshi Koshida (1.Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-3] Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM

H. Sukesako、K. Inoue、T. Kawasaki、H. Sakaue、S. Shingubara、T. Takahagi、Y. Horiike (1.Hiroshima University, Dept. of Electrical Engineering、2.Toyo University, Dept. of Electrical Engineering)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-4] Extremely Low ON-Resistance Metal to Metal Antifuses with Al/p-SiN/Al Structure for Next Generation FPGAs

Yoshitaka Kimura、Yoshimitsu Tamura、Chie Tsutsui、Hiroshi Shinriki (1.Advanced Technology Research Section LSI division Kawasaki Steel Corp.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-1] High Volume Production of Heterojunction Bipolar Transistors

Dwight C. Streit (1.TRW Electronic Systems and Technology Division)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-2] Orientation Effect on AlGaAs/GaAs Heterojunction Bipolar Transistors

Hidetoshi ISHIDA、Daisuke UEDA (1.Electronics Research Laboratory, Matsushita Electronics Corporation)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-3] 1.5V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors

T. Iwai、H. Shigematsu、H. Yamada、T. Tomioka、K. Joshin、T. Fujii (1.Fujitsu Laboratories Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード