[PA-1-1] N2O-Anneal Induced Local Thinning of Regrown Oxide due to Nitrogen Residue at LOCOS Isolation Edges

Chimoon Huang、K. T. Sung、N. C. Peng、M. Chao、Y. Chang、F. C. Shone (1.Macronix International Co., LTD)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-2] Properties of "Stoichiometric" Silicon Oxynitride Films

LeNian HE、Takao INOKUMA、Seiichi HASEGAWA (1.Department of Electronics, Faculty of Technology, Kanazawa University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-3] Growth Kinetics of Ultrathin Silicon Dioxide Films Formed by Rapid Thermal Oxidation

Hisashi FUKUDA、Katsunori AKASE、Toshiaki ENDOH、Shigeru NOMURA (1.Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-4] Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine

W. C. Yeh、R. Ishihara、S. Morishita、M. Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-5] Excellent Quality of SiO2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors

Tai-Ju Chen、Ching-Fa Yeh、Ching-Lin Fan、Jiann-Shiun Kao (1.Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University、2.Precision Instrument Development Center, National Science Council)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-6] SiO2 Thin Films Formation by Reactive Evaporation of SiO at a Low Temperature and Its Device Application

T. Sameshima、G. Langguth (1.Tokyo University of Agriculture & Technology、2.Max-Planck-Institut)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-7] Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

E. IIJIMA、T. AIBA、K. YAMAUCHI、H. NOHIRA、N. TATE、M. KATAYAMA、T. HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology、2.Shin-Etsu Handotai Co. Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PA-1-8] Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film

Kenji ISHIKAWA、Hiroki OGAWA、Sumiko OSHIDA、Kaina SUZUKI、Shuzo FUJIMURA (1.Process development division C850, Fujitsu Limited)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-9-1] Atomically Controlled Formation of Dielectric and High Tc Oxide Thin Films by Laser Ablation

Tomoji KAWAI (1.ISIR-Sanken, Osaka University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-9-2] High Dielectric Constant (Ba, Sr)TiO3 Thin Films for ULSI DRAM Application

Yoichi Miyasaka (1.Fundamental Research Laboratories, NEC Corporation)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

375件中(161 - 170)

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