[S-II-1] Artificial Quantum Solids that Compute: Quantum-Mechanical Logic Gates and Neuromorphic Networks

S. BANDYOPADHYAY、V. P. ROYCHOWDHURY (1.Department of Electrical Engineering, University of Notre Dame、2.School of Electrical Engineering, Purdue University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-2] Single-Electron Tunneling in Coupled Nanowire Systems

A. A. TAGER、M. LU、J. M. XU、M. MOSKOVITS (1.Electrical & Computer Engineering Dept., University of Toronto、2.Chemistry Dept., University of Toronto)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-3] Single Electron Device with Asymmetric Tunnel Barriers

Y. Matsumoto、T. Hanajiri、T. Toyabe、T. Sugano (1.Dept. of Electrical and Electronic Eng.、2.Dept. of Information and Computer Science, Toyo Univ.、3.Frontier Research Program RIKEN (The Institute of Physical and Chemical Research))

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-4] Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

Yasuo TAKAHASHI、Masao NAGASE、Hideo NAMATSU、Kenji KURIHARA、Kazumi IWADATE、Yasuyuki NAKAJIMA、Seiji HORIGUCHI、Katsumi MURASE、Michiharu TABE (1.NTT LSI Laboratories、2.Shizuoka Univ.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-5] Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process

Kazuhiko MATSUMOTO、Masami ISHII、Kazuhito SEGAWA、Yasushi OKA、Bartev J. VARTANIAN、James S. HARRIS (1.Electrotechnical Laboratory MITI、2.Stanford University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-6] Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K

Kei-ichiroh JINUSHI、Hiroshi OKADA、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Engineering, Hokkaido University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-7] Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry

Toshimasa Fujisawa、Seigo Tarucha (1.NTT Basic Research Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-1-1] Characterization of One-Dimensional Conduction in an Ultra-Thin Poly-Si Wire

Tomoyuki Ishii、Kazuo Yano、Toshiaki Sano、Toshiyuki Mine、Fumio Murai、Koichi Seki (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi Device Engineering Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-1-2] Complementary Digital Logic Using Resistively Coupled Single Electron Transistor

Nobuyuki YOSHIKAWA、Yasuyuki JINGUU、Hiroshi ISHIBASHI、Masanori SUGAHARA (1.Faculty of Engineering, Yokohama National University)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PB-1-3] Cotunneling-Tolerant Single-Electron Logic

Shuhei AMAKAWA、Hironobu FUKUI、Minoru FUJISHIMA、Koichiro HOH (1.Department of Information and Communication Engineering, the University of Tokyo)

1995 International Conference on Solid State Devices and Materials |PDF ダウンロード

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