[A-12-3] Atomic Configuration of Segregated B on Si(001) Surface

T. Komeda, Y. Nishioka (1.Texas Instruments, Tsukuba R&D Center)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-12-4] SiH4/H2O2 Oxide Planarization Controlled by Surface Reaction of Si-H Bond

Toru YOSHIE, Masaki YOSHIMARU (1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-13-1] Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution

Yoshihiro Sugita, Satoru Watanabe (1.Fujitsu Laboratories Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-13-2] Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching

Hiroyuki Komeda, Tohru Ueda, Sakae Wada, Tadahiro Ohmi (1.Department of Electronic Engineering, Tohoku University, 2.Process development Center, Sharp Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-13-3] Characterization of Hydrogen in Epitaxial Si Films Grown at Very Low Temperature

Katsuya Abe, Akira Yamada, Makoto Konagai (1.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-13-4] Evaluation of Dry-Etching Damage Introduced into Si by Schottky Junction Characteristics

K. Hamada, T. Kitano (1.ULSI Device Dev. Labs., NEC Corp.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-13-5] Crystalline Si/SiOx Multilayer Structure Grown by Molecular Beam Epitaxy

Chi Sheng, Feng Lin, Dawei Gong, Jun Wan, Yongliang Fan, Xun Wang (1.Surface Physics Laboratory, Fudan University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-14-1] Current Status of 200 mm and 300 mm Silicon Wafers

Howard R. Huff, D. W. McCormack, Jr. Chi Au, Troy Messina, Kevin Chan, Randal K. Goodall (1.SEMATECH, 2.I300I)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-14-2] Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon

Hideki Takahashi, Hiroshi Yamada-Kaneta, Masashi Suezawa (1.Process Division, Fujitsu, Ltd., 2.Institute for Materials Research, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-14-3] New Three-Dimensional Wafer Bonding Technology Using Adhesive Injection Method

T. Matsumoto, M. Satoh, K. Sakuma, H. Kurino, N. Miyakawa, H. Itani, M. Koyanagi (1.Dept. of Machine Intelligence and System Engineering, Tohoku University, 2.Fuji Xerox Co., 3.Mitsubishi Heavy Industry Co.)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (221 - 230)

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