[D-12-5] Surface and Interface Structures of Ultra-Thin Thermal Oxides on Si(100)

Masaaki Fujimura, Tomoyuki Yagi, Masatoshi Ohashi, Takeo Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-13-1] A Unified Model for Charge Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic (PV) Devices and Current Induced Defects in Thin Film Transistors (TFTs)

Hong YANG, Gerald LUCOVSKY (1.Department of Chemistry, North Carolina State University, 2.Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-13-2] The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy

Jeng-Hua Wei, Ming-Shyan Sun, Si-Chen Lee (1.Department of Electrical Engineering, National Taiwan University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-13-3] Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Superlattice Structure

Kazuaki Sawada, Yoshihiro Okumura, Yoshinori Hatanaka, Takao Ando (1.Research Institute of Electronics, Shizuoka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-13-4] Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes

Koki Ueno, Hideki Koyama, Nobuyoshi Koshida (1.Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-6-7] Ultra-Shallow Junotion Formation by AsH3 Adsorption Method

Y. H. Song, S. Pidin, T. Kurabayashi, H. Kurino, M. Koyanagi (1.Department of Machine Intelligence and System Engineering, Department of Mechatronics and Precision Engineering, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs

T. Saraya, M. Takamiya, T. N. Duyet, T. Hiramoto (1.Institute of Industrial Science, University of Tokyo, 2.VLSI Design and Education Center, Univ. of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-4-6] Low Threshold and Record High TO (140 K) Long Wavelength Strained Quantum Well Lasers on InGaAs Ternary Substrates

K. Otsubo, H. Shoji, T. Kusunoki, T. Suzuki, T. Uchida, Y. Nishijima, K. Nakajima, H. Ishikawa (1.RWCP Optical Interconnection Fujitsu Laboratory, 2.Fujitsu Laboratories Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-4-7] Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP

Koichi Wakita, Isamu Kotaka, Ryuzo Iga, Susumu Kondo, Yoshio Noguchi (1.NTT Opto-electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-6-9] Experimental Evidence of ZnCdSe Quantum Wires Achieved by Strain-Induced Lateral Confinement

E. Vanelle, B. P. Zhang, T. Yasuda, W. X. Wang, Y. Segawa, T. Itoh (1.Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 2.Department of Applied Physics, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download