[B-11-6] Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers

Mitsuteru ISHIKAWA, Wugen PAN, Yasuhisa KANEKO, Hiroyuki YAGUCHI, Kentaro ONABE, Ryoichi ITO, Yasuhiro SHIRAKI (1.Department of Applied Physics, The University of Tokyo, 2.Hewlett-Packard Laboratories Japan, 3.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-7] Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K

Sanshiro Shiina, Kanji Yoh (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-8] AFM Study of Phthalocyanine-Based Thin Film Gas Sensor

Tadashi Nagasawa, Kenji Murakami, Kenzo Watanabe (1.Graduate School of Electronic Science and Technology and Research Institute of Electronics, Shizuoka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Low-Temperature Poly-Si TFT-LCDs with Digital Interface

Jun Koyama, Yasushi Ogata, Yukio Tanaka, Setsuo Nakajima, Shumpei Yamazaki, Yasushi Kubota, Yasukuni Yamane, Yutaka Takafuji, Fumiaki Funada, Shun-ichi Naka (1.Semiconductor Energy Laboratory Co., Ltd., 2.Tenri Liquid Crystal Display Group, Sharp Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] A Characteristics of Buried Channel Poly-Si TFTs

Cheol-Min Park, Juhn-Suk Yoo, Byung-Hyuk Min, Jae-Hong Jeon, Min-Koo Han (1.Room 1102, School of Electrical Engineering, Seoul National University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio

Kwon-Young Choi, Kee-Chan Park, Hyung-Bae Choi, Min-Koo Han (1.School of Electrical Engineering, Seoul National University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4] New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current

Jae-Hong Jeon, Cheol-Min Park, Juhn-Suk Yoo, Cheon-Hong Kim, Min-Koo Han (1.School of Electrical Engineering, Seoul National University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Differentiation of Effects Due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

S. Uppal, G. A. Armstrong, S. D. Brotherton, J. R. Ayres (1.Department of Electrical and Electronic Engineering, The Queens University of Belfast, 2.Philips Research Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD

Kwon-Young Choi, Kee-Chan Park, Cheon-Hong Kim, Juhn-Suk Yoo, Min-Koo Han (1.School of Electrical Engineering, Seoul National University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-8-3] Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films

Ryoichi Ishihara (1.Laboratory of Electronic Components and Materials (ECTM) Delft Institute of Microelectronics and Submicrontechnology (DIMES), Delft University of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download