[C-4-3] Transport and Optical Properties of Single Quantum Well Infrared Photodetectors

Yozo Shimada, Kazuhiko Hirakawa (1.Institute of Industrial Science, University of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-4-4] Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection

Naofumi Shimizu, Noriyuki Watanabe, Tomofumi Furuta, Tadao Ishibashi (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-4-5] Highly Reliable Operation of InGaAlAs Waveguide Photodiodes for Access Network Systems

H. Nakamura, M. Shishikura, S. Tanaka, Y. Matsuoka, T. Ono, S. Tsuji (1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi Device Engineering, Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Fabrication of GaN Quantum Dots and Their Optical Properties

Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Yoshinobu Aoyagi (1.The Institute of Physical and Chemical Research (RIKEN))

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Selective Area Growth of Widegap II-VI Semiconductors on Patterned Substrates

A. Ueta, A. Avramescu, K. Uesugi, T. Numai, I. Suemune, H. Machida, H. Shimoyama (1.Research Institute for Electronic Science, Hokkaido University, 2.Trichemical Laboratory)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] GaN-Rich Side of GaNAs Grown by Gas Source MBE

K. Iwata, H. Asahi, K. Asami, R. Kuroiwa, S. Gonda (1.The Institute of Scientific and Industrial Research, Osaka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy

Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito (1.Department of Applied Physics, The University of Tokyo, 2.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-5] Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process

Yuji Yamagata, Koji Fujiwara, Takayuki Sawada, Kazuaki Imai, Kazuhiko Suzuki, Isao Tsubono (1.Department of Applied Electronics, Hokkaido Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-6] Estimation of Direct-to-Indirect Crossover of Cubic AlxGa1-xN Alloy

Atsushi Nakadaira, Hidenao Tanaka (1.NTT Integrated Information & Energy Systems Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-5-7] Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique

Toru Aoki, Akira Ishibashi, Masaharu Nagai, Yoshinori Hatanaka (1.Graduate School of Electronic Science and Technology, 2.Research Institute of Electronics, Shizuoka University, 3.Sony Corporation Research Center)

1997 International Conference on Solid State Devices and Materials |PDF Download

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