[A-10-2] Formation of Low-Resistivity Gate Electrode Suitable for the Future Devices Using Clustered DCS-Wsix Polycide

Jeong Soo Byun, Byung Hak Lee, Ji-Soo Park, Dong-Kyun Sohn, Jae Jeong Kim (1.Process Gr., Adv. Tech. Lab., LG Semicon. Co. Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-10-3] Advanced Ti Silicide Technology with Buffer Thin Al Layer

A. Kishi, T. Doi, S. Ohnisi, K. Iguti, K. Sakiyama, Jer-shen Maa, S. T. Hsu (1.VLSI Development Laboratories, IC Group, SHARP Corporation, 2.Process Development Center, IC Group, SHARP Corporation, 3.Sharp Microelectronics Technology, Inc.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-10-4] W-Plug Common Contact with CoSi2 Ohmic Layer for Scaled DRAM and Merged DRAM in Logic (MDL) Devices

Siyoung Choi, Bong-Young Yoo, Hyeon-Deok Lee, Ho-Kyu Kang, Moon-Yong Lee (1.L/S Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-10-5] A Reliable Double Level Interconnection Technology for Giga Bit DRAMs Using SiO2 Mask Al Etching and PECVD SiOF

Takashi Yokoyama, Yoshiaki Yamada, Koji Kishimoto, Hideaki Kawamoto, Hideki Gomi, Kazuyoshi Ueno (1.NEC Corporation, ULSI Device Development Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-11-1] Directional Plasma CVD Technology for Sub-Quarter Micrometer Feature Size Multilevel Interconnection

Yutaka Kudoh, Yoshio Homma, Noriyuki Sakuma, Takeshi Furusawa (1.Hitachi Electronics Engineering Co. Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-11-2] Heat and Moisture Resistance of Low-Capacitance Multilevel Interconnections Using Low-Permittivity Organic Spin-On Glass

Takeshi Furusawa, Yoshio Homma (1.Central Research Laboratory, Hitachi, Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-11-3] Initial Stages of Cu Growth on Polyimide Deposited by Ionized Cluster Beam

N. Y. Kim, C. E. Hong, H.-S. Yoon, S. Y. Kim, K. W. Kim, Y. S. Lee, C. N. Whang (1.Dept. of Physics, Yonsei University, 2.Dept. of Physics, Soongsil University, 3.Dept. of Physics, Sunmoon University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-11-4] The Effect of Film Texture and Zirconium Diffusion on Reliability Against Electromigration for CVD Copper

Nobuyoshi Awaya, Toshio Kobayashi (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-11-5] The Effect of Underlayer Texture on Cu Film Orientation in Cu/Refractory-Metal Structure

Kazuhide Abe, Yusuke Harada, Hiroshi Onoda (1.VLSI Research and Development Center, Oki Electric Industry Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-11-6] Plasma Etching of Copper Films Using Ultra Violet Radiation

Kang-Sik Choi, Chul-Hi Han (1.Dept. of Electrical Engineering, KAIST, 2.LG semicon. Co. Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

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