[D-10-1] Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)

Takatomo Enoki, Haruki Yokoyama, Yohtaro Umeda, Taiichi Otsuji (1.NTT System Electronics Laboratories, Optical Network Systems Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-2] Development of the High Aspect-Ratio Y-Shaped Gate Process for HEMT

Ryoji Shigemasa, Yoshiki Nitta, Tomoyuki Ohshima, Masanori Tsunotani, Tamotsu Kimura (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-3] Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Takatomo Enoki, Haruki Yokoyama, Yasunobu Ishii (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-4] High-Performance Recessed Gate HFETs with New Doped Channel Structure

Makoto Inai, Hidehiko Sasaki, Hiroyuki Seto, Fujio Okui Susumu Fukuda, Hisashi Ariyoshi (1.RF Semiconductor Products Dept., Circuit Products Division, Murata Mfg. Co. Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-5] High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave MMICs

H. Ohta, T. Tanimoto, I. Ohbu, K. Higuchi, S. Takatani, N. Kurita, K. Kamozaki, H. Kondoh (1.Hitachi ULSI Engineering, Corp., 2.Central Research Laboratory, Hitachi Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-6] Extremely Low Noise 0.15 μm T-Gate AlGaAs/InGaAs Pseudomorphic HEMTs

Hyung-Sup Yoon, Jin-Hee Lee, Hyung-Sun Park, Hyun-Tae Choi, Chul-Soon Park, Kwang-Eui Pyun (1.Compound Semiconductor Research Department, Semiconductor Technology Division, Electronics and Telecommunications Research Institute)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-7] Growth and Characterization of AlGaAs/InGaAs/GaAs P-HEMTs Grown by LP-MOCVD Using Inverted Double Channel Structure

K. H. Ahn, Y. J. Jeon, Y. H. Jeong, C. E. Yun, H. M. Pyo (1.Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, 2.Wireless Communications Research Lab., Korea Telecommunication)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-8] Electrical Properties of Metal-Insulator-Semiconductor (MIS) Interface and MISFETs Employing Hydrogenated Diamond Film Surface

Young Yun, Tetsuro Maki, Hiroyuki Tanaka, Takeshi Kobayashi (1.Department of Electrical Engineering, Faculty of engineering Science, Osaka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-12-1] Oxygen-Hydrogen Interactions in Silicon

R C Newman (1.Interdisciplinary Research Centre for Semiconductor Materials The Blackett Laboratory, Imperial College of Science, Technology and Medicine)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-12-2] Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon

Toshio Takagi, Takashi Shimizu, Satoru Matsumoto, Yoshiyuki Sato, Eisuke Arai, Takao Abe (1.Faculty of Sicence and Technology, Keio University, 2.NTT LSI Laboratories, 3.Nagoya Institute of Technology, 4.SEH R&D Center, Shin-Etsu Handotai Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download