[B-11-9] Perfect Spatial Ordering of Self-Organized InGaAs/AlGaAs Box-Like Structure on GaAs (311)B Substrate with Buried Silicon-Nitride Dot Array

Eiichi Kuramochi, Jiro Temmyo, Hidehiko Kamada, Toshiaki Tamamura (1.NTT Opto-electronics Laboratories, 2.NTT Basic Research Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-10] Characteristics of Nanoscale Lithography Using Atomic Force Microscope with Current-Controlled Exposure System

Masayoshi Ishibashi, Seiji Heike, Hiroshi Kajiyama, Yasuo Wada, Tomihiro Hashizume (1.Advanced Research Laboratory, Hitachi, Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-11] Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors

A. KOHNO, H. MURAKAMI, M. IKEDA, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-12] Tuneable, Strongly Non-Parabolic Confinement in a Quasi One Dimensional Electron Gas Formed by Epitaxial Regrowth

S Cina, DD Arnone, JH Burroughes, CE Norman, T Burke, HP Hughes, M Pepper, DA Ritchie (1.Cavendish Laboratory, University of Cambridge, 2.Toshiba Cambridge Research Center Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-10-9] High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs

Hideaki Matsuzaki, Kunihiro Arai, Koichi Maezawa, Jiro Osaka, Masafumi Yamamoto, Taiichi Otsuji (1.NTT System Electronics Laboratories and, 2.NTT Optical Network Systems Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-11-5] Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs

Hisao Kawaura, Toshitsugu Sakamoto, Yukinori Ochiai, Jun'ichi Fujita, Toshio Baba (1.Fundamental Research Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-4-4] The Scanning Capacitance Microscope as a Characterization Tool for Semiconductor Devices

Nobuyuki Nakagiri (1.Tsukuba Research Laboratory, Nikon Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (281 - 287)

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