[D-6-6] A New Approach of Photonic Bandgap Formation -Wafer Bonding and Delamination Technique-

K. Wada、H. Aga、K. Mitani、T. Abe、M. Suezawa、L. C. Kimerling (1.Department of Materials Science, Massachusetts Institute of Technology、2.Shin-Etsu Handotai、3.Institute of Materials Research, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-7] A 1.3-um Operation Si-Based Planar P-I-N Photodiode with Ge Absorption Layer Using Strain-Relaxing Selective Epitaxial Growth Technology

M. Sugiyama、T. Morikawa、T. Tatsumi、T. Aoyama、F. Sato (1.ULSI Device Development Laboratories, NEC Corporation、2.Silicon Systems Research Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-8] Signal Propagation Characteristics in Polymide Optical Waveguide with Micro-Mirrors for Optical Multichip Module

Yasuhiro KUWANA、Akinori HIROSE、Hiroyuki KURINO、Mitsumasa KOYANAGI (1.Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd.、2.Faculty of Engineering, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-9] An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers

Dooyoung Hah、Euisik Yoon、Songcheol Hong (1.Department of Electrical Engineering, KAIST)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-1] Millimeter-Wave MMIC Technology

Yasushi Itoh (1.Mitsubishi Electric Corporation, Information Technology R & D Center)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-2] 20V Operation Power GaAs MESFET with a Field-Modulating Plate

K. Asano、Y. Miyoshi、K. Ishikura、Y. Nashimoto、M. Kuzuhara、M. Mizuta (1.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-3] Analysis of Electric Field Distribution in Novel GaAs MESFET with a Field-Modulating Plate

Yasuko Hori、Masaaki Kuzuhara、Masashi Mizuta (1.Kansai Electronics Research Laboratories, NEC Corporation、2.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-4] High Current/gm Self-Aligned PJ-HFET of Completely Enhancement-Mode Operation

K. Nishii、M. Nishitsuji、T. Yokoyama、S. Yamamoto、A. Tamura、K. Inoue (1.Electronics Research Laboratory, Matsushita Electronics Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-5] Annealing Behavior of Low-Temperature-Deposited SrTiO3 Capacitor

Mitsuru Nishitsuji、Kaoru Inoue、Akiyoshi Tamura、Tsuyoshi Tanaka、Daisuke Ueda (1.Electronics Research Laboratory, Matsushita Electronics Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-6] From Strain-Compensated In0.80Ga0.20As/InAlAs to InAs/InAlAs HEMT's

I. J. Hsieh、C. C. Liao、C. Tsai、Albert Chin (1.Inst. of Electronics Eng., National Chiao Tung Univ.、2.Dept. of Electrical Engineering, Chung Hua Univ.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード